Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Low-nitrogen low-oxygen hafnium tantalum carbon ceramic precursor and preparation method thereof
The invention provides a low-nitrogen low-oxygen hafnium tantalum carbon ceramic precursor and a preparation method thereof, and belongs to the technical field of ceramic materials, the method comprises the following steps: preparing hafnium dichloride, a first hafnium intermediate and a second hafnium intermediate; mixing a first solvent, the first hafnium intermediate and the second hafnium intermediate, and reacting at 57-62 DEG C for 3.6-4.2 hours to obtain a hafnium carbide ceramic precursor; preparing tantalum trichloride, a first tantalum intermediate and a second tantalum intermediate; mixing a first solvent, the first tantalum intermediate and the second tantalum intermediate, and reacting at the temperature of 57-62 DEG C to obtain a tantalum carbide ceramic precursor; and mixing a third solvent, the nitrogen-containing weak ligand, the hafnium carbide ceramic precursor and the tantalum carbide ceramic precursor, and reacting at the temperature of 57-62 DEG C to obtain the low-nitrogen low-oxygen hafnium tantalum carbon ceramic precursor. The low-nitrogen low-oxygen hafnium-tantalum-carbon ceramic precursor disclosed by the invention has an important application prospect in high-temperature application in the fields of spaceflight, aviation and the like.
本发明给出了一种低氮低氧铪钽碳陶瓷前驱体及其制备方法，属于陶瓷材料技术领域，该方法包括：制备二氯二茂铪、第一铪中间体和第二铪中间体；将第一溶剂、第一铪中间体和第二铪中间体混合，在57～62℃的温度下反应3.6～4.2小时，得到碳化铪陶瓷前驱体；制备三氯二茂钽、第一钽中间体和第二钽中间体；将第一溶剂、第一钽中间体和第二钽中间体混合，在57～62℃的温度下反应，得到碳化钽陶瓷前驱体；将第三溶剂、含氮弱配位体、碳化铪陶瓷前驱体和碳化钽陶瓷前驱体混合后，在于57～62℃的温度下反应，得到低氮低氧铪钽碳陶瓷前驱体。本发明低氮低氧铪钽碳陶瓷前驱体适用在航天、航空领域等高温应用中具有重要的应用前景。
Low-nitrogen low-oxygen hafnium tantalum carbon ceramic precursor and preparation method thereof
The invention provides a low-nitrogen low-oxygen hafnium tantalum carbon ceramic precursor and a preparation method thereof, and belongs to the technical field of ceramic materials, the method comprises the following steps: preparing hafnium dichloride, a first hafnium intermediate and a second hafnium intermediate; mixing a first solvent, the first hafnium intermediate and the second hafnium intermediate, and reacting at 57-62 DEG C for 3.6-4.2 hours to obtain a hafnium carbide ceramic precursor; preparing tantalum trichloride, a first tantalum intermediate and a second tantalum intermediate; mixing a first solvent, the first tantalum intermediate and the second tantalum intermediate, and reacting at the temperature of 57-62 DEG C to obtain a tantalum carbide ceramic precursor; and mixing a third solvent, the nitrogen-containing weak ligand, the hafnium carbide ceramic precursor and the tantalum carbide ceramic precursor, and reacting at the temperature of 57-62 DEG C to obtain the low-nitrogen low-oxygen hafnium tantalum carbon ceramic precursor. The low-nitrogen low-oxygen hafnium-tantalum-carbon ceramic precursor disclosed by the invention has an important application prospect in high-temperature application in the fields of spaceflight, aviation and the like.
本发明给出了一种低氮低氧铪钽碳陶瓷前驱体及其制备方法，属于陶瓷材料技术领域，该方法包括：制备二氯二茂铪、第一铪中间体和第二铪中间体；将第一溶剂、第一铪中间体和第二铪中间体混合，在57～62℃的温度下反应3.6～4.2小时，得到碳化铪陶瓷前驱体；制备三氯二茂钽、第一钽中间体和第二钽中间体；将第一溶剂、第一钽中间体和第二钽中间体混合，在57～62℃的温度下反应，得到碳化钽陶瓷前驱体；将第三溶剂、含氮弱配位体、碳化铪陶瓷前驱体和碳化钽陶瓷前驱体混合后，在于57～62℃的温度下反应，得到低氮低氧铪钽碳陶瓷前驱体。本发明低氮低氧铪钽碳陶瓷前驱体适用在航天、航空领域等高温应用中具有重要的应用前景。
Low-nitrogen low-oxygen hafnium tantalum carbon ceramic precursor and preparation method thereof
一种低氮低氧铪钽碳陶瓷前驱体及其制备方法
YE MINGXIN (Autor:in) / SHEN JIANFENG (Autor:in) / YE CHUMING (Autor:in) / LI NA (Autor:in) / REN ZHOUHONG (Autor:in) / LI SHUANGWEN (Autor:in)
06.12.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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