Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Ultralow-temperature sintered ceramic material as well as preparation method and application thereof
The invention relates to the technical field of low-temperature sintered ceramic materials, in particular to an ultralow-temperature sintered ceramic material and a preparation method and application thereof. According to the ultralow-temperature sintered ceramic material, Al2O3, AlN, SiC and the like are used as raw materials, H3BO3 is used as a sintering aid, and the ultralow-temperature sintered ceramic material is prepared through ball milling, drying, sieving, grinding and ultralow-temperature sintering at the temperature of 100 DEG C or below through secondary pressure maintaining and is applied to packaging of silicon-based chips. The raw materials are easy to obtain, the process is simple, the H3BO3 is used as the sintering aid, the property that the H3BO3 particles can generate plastic deformation under uniaxial pressure is utilized, the ceramic material is densified under the ultralow temperature condition of 25-100 DEG C by applying pressure, and the ceramic material can be co-fired with a silicon-based chip, so that the sintering performance of the silicon-based chip is improved, and the service life of the silicon-based chip is prolonged. The composite ceramic material with good quality factor, appropriate dielectric constant and excellent thermal conductivity is formed, and can be applied to semiconductor packaging, LTCC devices or ULTCC devices and the like.
本申请涉及低温烧结陶瓷材料技术领域，尤其涉及一种超低温烧结陶瓷材料及其制备方法和应用。本申请的超低温烧结陶瓷材料以Al2O3、AlN、SiC等为原材料，通过H3BO3作为烧结助剂，经球磨、干燥、过筛、研磨、二次保压的100℃以下的超低温烧结，制备获得超低温烧结陶瓷材料，并应用于硅基芯片的封装。本申请的原材料易获取，工艺简单，通过将H3BO3作为烧结助剂，利用H3BO3颗粒在单轴压力下可产生塑性形变的性质，通过施加压力，实现在25～100℃的超低温条件下使陶瓷材料完成致密化，并能够与硅基芯片共烧，形成具有良好品质因数、适宜的介电常数、优良的热导率的复合陶瓷材料，可应用于半导体封装、LTCC器件或ULTCC器件等。
Ultralow-temperature sintered ceramic material as well as preparation method and application thereof
The invention relates to the technical field of low-temperature sintered ceramic materials, in particular to an ultralow-temperature sintered ceramic material and a preparation method and application thereof. According to the ultralow-temperature sintered ceramic material, Al2O3, AlN, SiC and the like are used as raw materials, H3BO3 is used as a sintering aid, and the ultralow-temperature sintered ceramic material is prepared through ball milling, drying, sieving, grinding and ultralow-temperature sintering at the temperature of 100 DEG C or below through secondary pressure maintaining and is applied to packaging of silicon-based chips. The raw materials are easy to obtain, the process is simple, the H3BO3 is used as the sintering aid, the property that the H3BO3 particles can generate plastic deformation under uniaxial pressure is utilized, the ceramic material is densified under the ultralow temperature condition of 25-100 DEG C by applying pressure, and the ceramic material can be co-fired with a silicon-based chip, so that the sintering performance of the silicon-based chip is improved, and the service life of the silicon-based chip is prolonged. The composite ceramic material with good quality factor, appropriate dielectric constant and excellent thermal conductivity is formed, and can be applied to semiconductor packaging, LTCC devices or ULTCC devices and the like.
本申请涉及低温烧结陶瓷材料技术领域，尤其涉及一种超低温烧结陶瓷材料及其制备方法和应用。本申请的超低温烧结陶瓷材料以Al2O3、AlN、SiC等为原材料，通过H3BO3作为烧结助剂，经球磨、干燥、过筛、研磨、二次保压的100℃以下的超低温烧结，制备获得超低温烧结陶瓷材料，并应用于硅基芯片的封装。本申请的原材料易获取，工艺简单，通过将H3BO3作为烧结助剂，利用H3BO3颗粒在单轴压力下可产生塑性形变的性质，通过施加压力，实现在25～100℃的超低温条件下使陶瓷材料完成致密化，并能够与硅基芯片共烧，形成具有良好品质因数、适宜的介电常数、优良的热导率的复合陶瓷材料，可应用于半导体封装、LTCC器件或ULTCC器件等。
Ultralow-temperature sintered ceramic material as well as preparation method and application thereof
一种超低温烧结陶瓷材料及其制备方法和应用
WANG HONG (Autor:in) / ZENG ZHAN (Autor:in) / WANG HONGYE (Autor:in) / XU XINWEI (Autor:in)
17.12.2024
Patent
Elektronische Ressource
Chinesisch
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