Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Chemical vapor infiltration densification method using single stack for semi-forced flow
The invention relates to a method for densifying a porous annular substrate (21) having a central channel (21a) by chemical vapor infiltration, comprising at least the following steps: providing a stack (20) of porous annular substrates (21); providing a plurality of individual modules (30), the individual modules (30) comprising a stack (20) disposed on support plates (31), each support plate having a perforated injection tube (33), each injection tube mounted on a gas inlet opening (32); forming a stack of individual modules (30), aligning the stacked individual modules (30) in a sealing manner by means of an annular seal (35) arranged between the injection tube (33) of the second individual module (30b) and the gas inlet opening (32) of the first individual module (30a) cooperating therewith, and injecting a gas phase into the internal volume (24) of each stack (20) of porous annular substrate (21), the gas phase comprises a gaseous precursor of a matrix material to be deposited in the pores of the substrate (21).
本发明涉及一种通过化学气相渗透使具有中心通道(21a)的多孔环形基材(21)致密化的方法，该方法包括至少以下步骤：提供多孔环形基材(21)的堆叠(20)；提供多个单独模块(30)，单独模块(30)包括设置在支撑板(31)上的堆叠(20)，每个支撑板具有有孔的注入管(33)，每个注入管安装在气体入口开口(32)上；形成单独模块(30)的堆叠，通过设置在第二单独模块(30b)的注入管(33)和与之配合的第一单独模块(30a)的气体入口开口(32)之间的环形密封件(35)以密封的方式对齐堆叠的单独模块(30)，并将气相注入多孔环形基材(21)的每个堆叠(20)的内部容积(24)中，所述气相包含待沉积在基材(21)的孔隙中的基质材料的气态前体。
Chemical vapor infiltration densification method using single stack for semi-forced flow
The invention relates to a method for densifying a porous annular substrate (21) having a central channel (21a) by chemical vapor infiltration, comprising at least the following steps: providing a stack (20) of porous annular substrates (21); providing a plurality of individual modules (30), the individual modules (30) comprising a stack (20) disposed on support plates (31), each support plate having a perforated injection tube (33), each injection tube mounted on a gas inlet opening (32); forming a stack of individual modules (30), aligning the stacked individual modules (30) in a sealing manner by means of an annular seal (35) arranged between the injection tube (33) of the second individual module (30b) and the gas inlet opening (32) of the first individual module (30a) cooperating therewith, and injecting a gas phase into the internal volume (24) of each stack (20) of porous annular substrate (21), the gas phase comprises a gaseous precursor of a matrix material to be deposited in the pores of the substrate (21).
本发明涉及一种通过化学气相渗透使具有中心通道(21a)的多孔环形基材(21)致密化的方法，该方法包括至少以下步骤：提供多孔环形基材(21)的堆叠(20)；提供多个单独模块(30)，单独模块(30)包括设置在支撑板(31)上的堆叠(20)，每个支撑板具有有孔的注入管(33)，每个注入管安装在气体入口开口(32)上；形成单独模块(30)的堆叠，通过设置在第二单独模块(30b)的注入管(33)和与之配合的第一单独模块(30a)的气体入口开口(32)之间的环形密封件(35)以密封的方式对齐堆叠的单独模块(30)，并将气相注入多孔环形基材(21)的每个堆叠(20)的内部容积(24)中，所述气相包含待沉积在基材(21)的孔隙中的基质材料的气态前体。
Chemical vapor infiltration densification method using single stack for semi-forced flow
对于半强制流动使用单叠板的化学气相渗透致密化方法
CHAMPAIN MATTHEW (Autor:in) / ROSTAND JEFF (Autor:in) / LAMOUROUX FRANCK (Autor:in) / BERTRAND SEBASTIEN (Autor:in)
27.12.2024
Patent
Elektronische Ressource
Chinesisch
Method for densification by chemical vapor infiltration
| Europäisches Patentamt | 2024
Methods for chemical vapor infiltration and densification of porous substrates
| Europäisches Patentamt | 2023
CVI (Chemical Vapor Infiltration) densification method for thick three-dimensional needled component
| Europäisches Patentamt | 2024
METHOD FOR DENSIFICATION BY CHEMICAL VAPOUR INFILTRATION
| Europäisches Patentamt | 2024
SYSTEMS AND METHODS FOR CHEMICAL VAPOR INFILTRATION AND DENSIFICATION OF POROUS SUBSTRATES
| Europäisches Patentamt | 2020