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Preparation method of high-conductivity ITO (Indium Tin Oxide) nano powder
The invention discloses a preparation method of high-conductivity ITO (Indium Tin Oxide) nano powder, which comprises the following steps: preparing a precursor solution, namely mixing and dissolving metal indium powder, hydrochloric acid and deionized water to prepare an InCl3 solution with the volume ratio of hydrochloric acid to deionized water being 1: 1 and the concentration of the InCl3 solution being 25g/ml; the preparation method comprises the following steps: preparing a SnCl4 solution by using SnCl4. 5H2O and deionized water according to the mass ratio of In2O3 to SnO2 of 9: 1, and mixing the two solutions; the problems that in the prior art, chloride ions are not thoroughly removed, powder is prone to agglomeration, and the quality of the powder is prone to being affected are solved.
本发明公开一种高导电性ITO纳米粉末的制备方法,包括以下步骤:前驱体溶液配置:使用金属铟粉、盐酸和去离子水混合溶解,配制InCl3溶液,盐酸和去离子水的体积比为1:1,InCl3溶液的浓度25g/ml;按照In2O3/SnO2质量比9:1,使用SnCl4·5H2O和去离子水,配制SnCl4溶液,将两溶液混合。本发明解决了现有技术中氯离子的清除不彻底,粉体容易产生团聚,粉体质量容易收到影响的问题。
Preparation method of high-conductivity ITO (Indium Tin Oxide) nano powder
The invention discloses a preparation method of high-conductivity ITO (Indium Tin Oxide) nano powder, which comprises the following steps: preparing a precursor solution, namely mixing and dissolving metal indium powder, hydrochloric acid and deionized water to prepare an InCl3 solution with the volume ratio of hydrochloric acid to deionized water being 1: 1 and the concentration of the InCl3 solution being 25g/ml; the preparation method comprises the following steps: preparing a SnCl4 solution by using SnCl4. 5H2O and deionized water according to the mass ratio of In2O3 to SnO2 of 9: 1, and mixing the two solutions; the problems that in the prior art, chloride ions are not thoroughly removed, powder is prone to agglomeration, and the quality of the powder is prone to being affected are solved.
本发明公开一种高导电性ITO纳米粉末的制备方法,包括以下步骤:前驱体溶液配置:使用金属铟粉、盐酸和去离子水混合溶解,配制InCl3溶液,盐酸和去离子水的体积比为1:1,InCl3溶液的浓度25g/ml;按照In2O3/SnO2质量比9:1,使用SnCl4·5H2O和去离子水,配制SnCl4溶液,将两溶液混合。本发明解决了现有技术中氯离子的清除不彻底,粉体容易产生团聚,粉体质量容易收到影响的问题。
Preparation method of high-conductivity ITO (Indium Tin Oxide) nano powder
一种高导电性ITO纳米粉末的制备方法
TAN WEIMING (Autor:in) / WANG LILI (Autor:in) / ZHAO PENG (Autor:in) / XU CANHUI (Autor:in) / TAN ZONGYONG (Autor:in) / LIM SUNG WOOK (Autor:in)
10.01.2025
Patent
Elektronische Ressource
Chinesisch
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