Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD USING SAME
The invention is characterized in that, in a silicon nitride substrate comprising a grain boundary phase with silicon nitride crystal particles and having a heat conductivity of 50W/m·K or greater, the sectional structure of the silicon nitride substrate has a ratio (T2/T1) of 0.01 to 0.30 between the thickness T1 of the silicon nitride substrate and the total length T2 of the grain boundary phase in the thickness direction, and a variation in the dielectric strength of 15% or less from the mean value, as measured by the four terminal method, in which electrodes are brought into contact with the front and the back of the substrate. In addition, a dielectric strength mean value of 15 kv/mm or greater is desirable. According to this constitution, the silicon nitride substrate having a small dielectric strength variation, and the silicon nitride circuit substrate using the same, are obtained.
SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD USING SAME
The invention is characterized in that, in a silicon nitride substrate comprising a grain boundary phase with silicon nitride crystal particles and having a heat conductivity of 50W/m·K or greater, the sectional structure of the silicon nitride substrate has a ratio (T2/T1) of 0.01 to 0.30 between the thickness T1 of the silicon nitride substrate and the total length T2 of the grain boundary phase in the thickness direction, and a variation in the dielectric strength of 15% or less from the mean value, as measured by the four terminal method, in which electrodes are brought into contact with the front and the back of the substrate. In addition, a dielectric strength mean value of 15 kv/mm or greater is desirable. According to this constitution, the silicon nitride substrate having a small dielectric strength variation, and the silicon nitride circuit substrate using the same, are obtained.
SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD USING SAME
SILIZIUMNITRID-SUBSTRAT UND SILIZIUMNITRID-LEITERPLATTE MIT DIESEM SUBSTRAT
SANO TAKASHI (Autor:in) / NAKAYAMA NORITAKA (Autor:in) / AOKI KATSUYUKI (Autor:in)
01.02.2023
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
/
B32B
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
,
Schichtkörper, d.h. aus Ebenen oder gewölbten Schichten, z.B. mit zell- oder wabenförmiger Form, aufgebaute Erzeugnisse
/
C01B
NON-METALLIC ELEMENTS
,
Nichtmetallische Elemente
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
/
H05K
PRINTED CIRCUITS
,
Gedruckte Schaltungen
SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD USING THE SAME
| Europäisches Patentamt | 2017
SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD USING THE SAME
| Europäisches Patentamt | 2017
SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD USING THE SAME
| Europäisches Patentamt | 2018
Silicon nitride substrate and silicon nitride circuit board using the same
| Europäisches Patentamt | 2017
Silicon nitride substrate and silicon nitride circuit board using the same
| Europäisches Patentamt | 2018