Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
OXYNITRIDE THIN FILM AND CAPACITANCE ELEMENT
The object of the present invention is to provide a dielectric thin film and a capacitance element having excellent dielectric property. A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of A a B b O o N n (a + b + o + n =5), wherein said "A" is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said "B" is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not aligned to a particular crystal plane orientation, and a size of a crystallite of the crystalline particles included in the dielectric thin film is 100 nm or less.
OXYNITRIDE THIN FILM AND CAPACITANCE ELEMENT
The object of the present invention is to provide a dielectric thin film and a capacitance element having excellent dielectric property. A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of A a B b O o N n (a + b + o + n =5), wherein said "A" is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said "B" is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not aligned to a particular crystal plane orientation, and a size of a crystallite of the crystalline particles included in the dielectric thin film is 100 nm or less.
OXYNITRIDE THIN FILM AND CAPACITANCE ELEMENT
OXYNITRIDDÜNNSCHICHT UND KAPAZITÄTSELEMENT
FILM MINCE D'OXYNITRURE ET ÉLÉMENT DE CAPACITÉ
SHIBAHARA TAKESHI (Autor:in) / NAGAMINE YUKI (Autor:in) / TANAKA YOSHITOMO (Autor:in) / YAMAZAKI KUMIKO (Autor:in)
03.10.2018
Patent
Elektronische Ressource
Englisch