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SILICON CARBIDE PRODUCTION METHOD AND SILICON CARBIDE COMPOSITE MATERIAL
Provided is a method for producing a novel silicon carbide that can be reacted at a low reaction temperature. The present invention pertains to a silicon carbide production method comprising a step for sintering a composition that at least contains: silicon nanoparticles having an average particle diameter of less than 200 nm; and a carbon-based material.
SILICON CARBIDE PRODUCTION METHOD AND SILICON CARBIDE COMPOSITE MATERIAL
Provided is a method for producing a novel silicon carbide that can be reacted at a low reaction temperature. The present invention pertains to a silicon carbide production method comprising a step for sintering a composition that at least contains: silicon nanoparticles having an average particle diameter of less than 200 nm; and a carbon-based material.
SILICON CARBIDE PRODUCTION METHOD AND SILICON CARBIDE COMPOSITE MATERIAL
SILICIUMCARBIDHERSTELLUNGSVERFAHREN UND SILICIUMCARBIDVERBUNDWERKSTOFF
PROCÉDÉ DE PRODUCTION DE CARBURE DE SILICIUM ET MATÉRIAU COMPOSITE DE CARBURE DE SILICIUM
MAEDA MASANORI (Autor:in) / KOHNO AZUSA (Autor:in) / IKEDA YOSHINORI (Autor:in)
17.04.2019
Patent
Elektronische Ressource
Englisch
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