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COPPER/CERAMIC BONDED BODY AND INSULATED CIRCUIT BOARD

TERASAKI NOBUYUKI

In a copper/ceramic bonded body according to the present invention, copper members (12) and (13) are each bonded to one surface and the other surface of a ceramic member (11), active metal nitride layers (21) and (31) are formed on the ceramic member (11) side of the copper members (12) and (13), area rates A1 and A2 of an active metal compound containing Si and an active metal are set to 10% or less in regions (E1) and (E2) of 10 µm from the active metal nitride layers (21) and (31) to the copper members (12) and (13), and a ratio A1/A2 of the area rate A1 of the active metal compound on a side of the one surface and the area rate A2 of the active metal compound on a side of the other surface is set in a range of 0.7 or more and 1.4 or less.

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COPPER/CERAMIC BONDED BODY AND INSULATED CIRCUIT BOARD

TERASAKI NOBUYUKI

In a copper/ceramic bonded body according to the present invention, copper members (12) and (13) are each bonded to one surface and the other surface of a ceramic member (11), active metal nitride layers (21) and (31) are formed on the ceramic member (11) side of the copper members (12) and (13), area rates A1 and A2 of an active metal compound containing Si and an active metal are set to 10% or less in regions (E1) and (E2) of 10 µm from the active metal nitride layers (21) and (31) to the copper members (12) and (13), and a ratio A1/A2 of the area rate A1 of the active metal compound on a side of the one surface and the area rate A2 of the active metal compound on a side of the other surface is set in a range of 0.7 or more and 1.4 or less.

COPPER/CERAMIC BONDED BODY AND INSULATED CIRCUIT BOARD

TERASAKI NOBUYUKI

In a copper/ceramic bonded body according to the present invention, copper members (12) and (13) are each bonded to one surface and the other surface of a ceramic member (11), active metal nitride layers (21) and (31) are formed on the ceramic member (11) side of the copper members (12) and (13), area rates A1 and A2 of an active metal compound containing Si and an active metal are set to 10% or less in regions (E1) and (E2) of 10 µm from the active metal nitride layers (21) and (31) to the copper members (12) and (13), and a ratio A1/A2 of the area rate A1 of the active metal compound on a side of the one surface and the area rate A2 of the active metal compound on a side of the other surface is set in a range of 0.7 or more and 1.4 or less.

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Titel:

COPPER/CERAMIC BONDED BODY AND INSULATED CIRCUIT BOARD

Weitere Titelangaben:

KUPFER/KERAMIK VERBUNDKÖRPER UND ISOLIERTE LEITERPLATTE
CORPS COLLÉ EN CUIVRE/CÉRAMIQUE ET CARTE DE CIRCUIT IMPRIMÉ ISOLÉE

Beteiligte:

TERASAKI NOBUYUKI (Autor:in)

Erscheinungsdatum:

28.02.2024

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Englisch

Klassifikation:

IPC: C04B Kalk , LIME / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / H05K PRINTED CIRCUITS , Gedruckte Schaltungen

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