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SELECTIVE ETCHANT COMPOSITIONS AND METHODS
The present invention relates to compositions and methods for selectively etching silicon nitride in the presence of silicon oxide, polysilicon and/or metal silicides at a high etch rate and with high selectivity. Additives are described that can be used at various dissolved silica loading windows to provide and maintain the high selective etch rate and selectivity.
SELECTIVE ETCHANT COMPOSITIONS AND METHODS
The present invention relates to compositions and methods for selectively etching silicon nitride in the presence of silicon oxide, polysilicon and/or metal silicides at a high etch rate and with high selectivity. Additives are described that can be used at various dissolved silica loading windows to provide and maintain the high selective etch rate and selectivity.
SELECTIVE ETCHANT COMPOSITIONS AND METHODS
SELEKTIVE ÄTZMITTELZUSAMMENSETZUNGEN UND VERFAHREN
COMPOSITIONS ET PROCÉDÉS DE GRAVURE SÉLECTIVE
WU HSING-CHEN (Autor:in) / YANG MIN-CHIEH (Autor:in) / LIAO ARCHIE (Autor:in) / TAI WEN HUA (Autor:in) / LAN WEI-LING (Autor:in)
26.03.2025
Patent
Elektronische Ressource
Englisch