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Methods are provided for repairing a defect (22) on a silicon-containing substrate (14). The method may include applying a powder mixture (24) into the defect (22) of an existing coating (12) on a surface (15) of the silicon-containing substrate (14), wherein the powder mixture (24) comprises silicon and germanium at a Ge mole fraction of 0.01 to 0.3; and heat treating the powder mixture (24) within the defect (22) at a sintering temperature that is 1150 °C to 1400 °C to form a repaired bondcoat (76) within the defect (22). Repaired components are also provided that include a repaired bondcoat (76) formed within the defect (22) on the silicon-containing substrate (14), wherein the repaired bondcoat (76) comprises a silicon-germanium phase comprising a Ge mole fraction of germanium of 0.01 to 0.3 and a Si mole fraction of silicon of 0.7 to 0.99.
Methods are provided for repairing a defect (22) on a silicon-containing substrate (14). The method may include applying a powder mixture (24) into the defect (22) of an existing coating (12) on a surface (15) of the silicon-containing substrate (14), wherein the powder mixture (24) comprises silicon and germanium at a Ge mole fraction of 0.01 to 0.3; and heat treating the powder mixture (24) within the defect (22) at a sintering temperature that is 1150 °C to 1400 °C to form a repaired bondcoat (76) within the defect (22). Repaired components are also provided that include a repaired bondcoat (76) formed within the defect (22) on the silicon-containing substrate (14), wherein the repaired bondcoat (76) comprises a silicon-germanium phase comprising a Ge mole fraction of germanium of 0.01 to 0.3 and a Si mole fraction of silicon of 0.7 to 0.99.
REPAIR OF A SILICON-BASED BONDCOAT
REPARATUR EINER SILICIUMBASIERTEN BINDUNGSBESCHICHTUNG
RÉPARATION D'UNE COUCHE DE LIAISON À BASE DE SILICIUM
WAN JULIN (Autor:in)
10.07.2024
Patent
Elektronische Ressource
Englisch
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