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COVER OF A MULTILAYER ELECTRONIC COMPONENT WITH A PEROVSKITE STRUCTURE (ABO3) COMPRISING A FIRST METAL BASED ON CU, W, AG AND ZN
. A multilayer electronic component (100) comprising:- a body (110) including a capacitance forming portion (115) including a dielectric layer (111) and internal electrodes (121, 122), alternately arranged in a first direction (Z), and cover portions (112, 113) disposed on both surfaces of the capacitance forming portion opposing the first direction (Z); and external electrodes (131, 132) disposed on outer surface of the body (110) and connected to the internal electrode (121, 122), wherein:- the cover portions (112, 113) include a first dielectric material (111) having a perovskite structure represented by chemical formula ABO3, and- a first metal including one or more of Cu, W, Ag, and Zn, and wherein,- in at least a portion of the cover portions (112, 113),- an amount of the first metal is 2.0 moles or more and 9.0 moles or less, based on 100 moles of B element.
COVER OF A MULTILAYER ELECTRONIC COMPONENT WITH A PEROVSKITE STRUCTURE (ABO3) COMPRISING A FIRST METAL BASED ON CU, W, AG AND ZN
. A multilayer electronic component (100) comprising:- a body (110) including a capacitance forming portion (115) including a dielectric layer (111) and internal electrodes (121, 122), alternately arranged in a first direction (Z), and cover portions (112, 113) disposed on both surfaces of the capacitance forming portion opposing the first direction (Z); and external electrodes (131, 132) disposed on outer surface of the body (110) and connected to the internal electrode (121, 122), wherein:- the cover portions (112, 113) include a first dielectric material (111) having a perovskite structure represented by chemical formula ABO3, and- a first metal including one or more of Cu, W, Ag, and Zn, and wherein,- in at least a portion of the cover portions (112, 113),- an amount of the first metal is 2.0 moles or more and 9.0 moles or less, based on 100 moles of B element.
COVER OF A MULTILAYER ELECTRONIC COMPONENT WITH A PEROVSKITE STRUCTURE (ABO3) COMPRISING A FIRST METAL BASED ON CU, W, AG AND ZN
UMHÜLLUNG EINES MEHRSCHICHTIGEN ELEKTRONISCHEN BAUELEMENTS MIT PEROWSKIT-STRUKTUR (ABO3) MIT EINEM ERSTEN METALL AUF DER BASIS VON CU, W, AG UND ZN
COUVERTURE D'UN COMPOSANT ÉLECTRONIQUE MULTICOUCHE À STRUCTURE PÉROVSKITE (ABO3) COMPRENANT UN PREMIER MÉTAL À BASE DE CU, W, AG ET ZN
YUN HAN SOL (Autor:in) / KANG SUNG HYUNG (Autor:in) / KIM JI WON (Autor:in) / KANG MIN GOO (Autor:in)
26.02.2025
Patent
Elektronische Ressource
Englisch
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