Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
SPRAY DEPOSIT, MEMBER FOR SEMICONDUCTOR PRODUCTION EQUIPMENT, RAW MATERIAL FOR SPRAY COATING, AND SPRAY DEPOSIT PRODUCTION METHOD
PROBLEM TO BE SOLVED: To provide a spray deposit having high corrosion resistance and low water absorption to halogen plasma having high reactivity in semiconductor manufacturing.SOLUTION: A spray deposit contains magnesium, aluminum, oxygen and nitrogen as main components, and further contains a crystal phase of a MgO-AlN solid solution in which aluminum nitride is solid-dissolved in magnesium oxide as a main phase. The spray deposit is obtained by thermally spraying powder of a ceramic material containing magnesium, aluminum, oxygen and nitrogen as main components, and further contains the crystal phase of the MgO-AlN solid solution in which aluminum nitride is solid-dissolved in magnesium oxide as the main phase.
【課題】半導体製造における反応性の高いハロゲン系プラズマに対し、耐食性が高く吸水性の低い溶射膜を提供する。【解決手段】本発明の溶射膜は、マグネシウム、アルミニウム、酸素及び窒素を主成分とし、酸化マグネシウムに窒化アルミニウムが固溶したＭｇＯ−ＡｌＮ固溶体の結晶相を主相とするものである。この溶射膜は、マグネシウム、アルミニウム、酸素及び窒素を主成分とし、酸化マグネシウムに窒化アルミニウムが固溶したＭｇＯ−ＡｌＮ固溶体の結晶相を主相とするセラミックス材料の粉末を溶射することにより得られる。【選択図】なし
SPRAY DEPOSIT, MEMBER FOR SEMICONDUCTOR PRODUCTION EQUIPMENT, RAW MATERIAL FOR SPRAY COATING, AND SPRAY DEPOSIT PRODUCTION METHOD
PROBLEM TO BE SOLVED: To provide a spray deposit having high corrosion resistance and low water absorption to halogen plasma having high reactivity in semiconductor manufacturing.SOLUTION: A spray deposit contains magnesium, aluminum, oxygen and nitrogen as main components, and further contains a crystal phase of a MgO-AlN solid solution in which aluminum nitride is solid-dissolved in magnesium oxide as a main phase. The spray deposit is obtained by thermally spraying powder of a ceramic material containing magnesium, aluminum, oxygen and nitrogen as main components, and further contains the crystal phase of the MgO-AlN solid solution in which aluminum nitride is solid-dissolved in magnesium oxide as the main phase.
【課題】半導体製造における反応性の高いハロゲン系プラズマに対し、耐食性が高く吸水性の低い溶射膜を提供する。【解決手段】本発明の溶射膜は、マグネシウム、アルミニウム、酸素及び窒素を主成分とし、酸化マグネシウムに窒化アルミニウムが固溶したＭｇＯ−ＡｌＮ固溶体の結晶相を主相とするものである。この溶射膜は、マグネシウム、アルミニウム、酸素及び窒素を主成分とし、酸化マグネシウムに窒化アルミニウムが固溶したＭｇＯ−ＡｌＮ固溶体の結晶相を主相とするセラミックス材料の粉末を溶射することにより得られる。【選択図】なし
SPRAY DEPOSIT, MEMBER FOR SEMICONDUCTOR PRODUCTION EQUIPMENT, RAW MATERIAL FOR SPRAY COATING, AND SPRAY DEPOSIT PRODUCTION METHOD
溶射膜、半導体製造装置用部材、溶射用原料及び溶射膜製造方法
SATO YOSUKE (Autor:in) / INOUE KATSUHIRO (Autor:in) / KATSUTA YUJI (Autor:in)
14.01.2016
Patent
Elektronische Ressource
Japanisch
| Europäisches Patentamt | 2017
| Europäisches Patentamt | 2016
SPRAY COATING MATERIAL AND SPRAY COATING MADE OF SAME SPRAY COATING MATERIAL
| Europäisches Patentamt | 2019