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PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
PROBLEM TO BE SOLVED: To provide a non-lead piezoelectric material having high piezoelectric constant in room temperature region.SOLUTION: A piezoelectric material part 2 contains a main component containing perovskite metal oxide represented by a general formula (1) Ba(TiZr)O(0.02≤x≤0.13, 0.986≤a≤1.02 in the formula); a first accessory component consisting of Mn; and a second accessory component consisting of trivalent Bi. A content of Mn is equal to or more than 0.0020 mole and equal to or less than 0.0150 mole based on 1 mole of the metal oxide, and a content of Bi is equal to or more than 0.00042 mole and equal to or less than 0.00850 mole based on 1 mole of the metal oxide.
【課題】室温領域で高い圧電定数を有する非鉛圧電材料を提供する。【解決手段】一般式(1)Baa(Ti1−xZrx)O3(式中、0.02≦x≦0.13、0.986≦a≦1.02)で表わされるペロブスカイト型金属酸化物を含む主成分と、Mnよりなる第1副成分と、3価のBiよりなる第2副成分とを有する圧電材料部2である。Mnの含有量が金属酸化物1モルに対して0.0020モル以上0.0150モル以下、Biの含有量が金属酸化物1モルに対して0.00042モル以上0.00850モル以下である。【選択図】図1
PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
PROBLEM TO BE SOLVED: To provide a non-lead piezoelectric material having high piezoelectric constant in room temperature region.SOLUTION: A piezoelectric material part 2 contains a main component containing perovskite metal oxide represented by a general formula (1) Ba(TiZr)O(0.02≤x≤0.13, 0.986≤a≤1.02 in the formula); a first accessory component consisting of Mn; and a second accessory component consisting of trivalent Bi. A content of Mn is equal to or more than 0.0020 mole and equal to or less than 0.0150 mole based on 1 mole of the metal oxide, and a content of Bi is equal to or more than 0.00042 mole and equal to or less than 0.00850 mole based on 1 mole of the metal oxide.
【課題】室温領域で高い圧電定数を有する非鉛圧電材料を提供する。【解決手段】一般式(1)Baa(Ti1−xZrx)O3(式中、0.02≦x≦0.13、0.986≦a≦1.02)で表わされるペロブスカイト型金属酸化物を含む主成分と、Mnよりなる第1副成分と、3価のBiよりなる第2副成分とを有する圧電材料部2である。Mnの含有量が金属酸化物1モルに対して0.0020モル以上0.0150モル以下、Biの含有量が金属酸化物1モルに対して0.00042モル以上0.00850モル以下である。【選択図】図1
PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
圧電材料、圧電素子、圧電素子の製造方法、および電子機器
MATSUDA KATAYOSHI (Autor:in) / WATANABE TAKAYUKI (Autor:in) / MURAKAMI SHUNSUKE (Autor:in) / SAITO HIROSHI (Autor:in) / FURUTA TATSUO (Autor:in)
14.01.2016
Patent
Elektronische Ressource
Japanisch
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