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ALUMINUM NITRIDE SINTERED COMPACT, COMPONENT FOR SEMICONDUCTOR MANUFACTURING, AND METHOD FOR PRODUCING THE ALUMINUM NITRIDE SINTERED COMPACT
PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact high in plasma resistance and corrosion resistance, in which the generation of particles is suppressed to reduce contamination, a component for a semiconductor manufacturing, and a method for producing the aluminum nitride sintered compact.SOLUTION: Provided is an aluminum nitride sintered compact having a tendency that a Y compound as a rare earth compound is largely present toward the surface compared with the inside of the aluminum nitride sintered compact. Thus, a thermal expansion difference is relaxed, and the risk of peeling caused by thermal expansion is low. Further, the crystal grains of the Y compound are present on the surface of the aluminum nitride sintered compact, and further, the ratio of the number of the grains in contact with the crystal grains of the other Y compound in the horizontal direction along the surface is the high one of 80% or more. In this way, even in the case a CDV shower head 1 is exposed to the atmosphere of plasma or the atmosphere of reaction gas, the aluminum nitride sintered compact is hard to be deteriorated, and the generation of contamination can be suppressed.SELECTED DRAWING: Figure 1
【課題】耐プラズマ性や耐腐食性が高く、パーティクルの発生を抑制してコンタミネーションを低減することができる窒化アルミニウム焼結体及び半導体製造用部品並びに窒化アルミニウム焼結体の製造方法を提供すること。【解決手段】希土類化合物であるY化合物が、窒化アルミニウム焼結体の内部に比べて表面に向かうほど多く存在する傾向を有している。よって、熱膨張差を緩和して、熱膨張による剥離の可能性が低い。また、窒化アルミニウム焼結体の表面には、Y化合物の結晶粒子が存在するとともに、結晶粒子のうち、表面に沿った横方向にて他のY化合物の結晶粒子と接触している粒子数の割合が80%以上と多い。従って、CDVシャワーヘッド1が、プラズマの雰囲気や反応ガスの雰囲気などに晒された場合でも、窒化アルミニウム焼結体は劣化しにくく、コンタミネーションの発生を抑制できる。【選択図】図1
ALUMINUM NITRIDE SINTERED COMPACT, COMPONENT FOR SEMICONDUCTOR MANUFACTURING, AND METHOD FOR PRODUCING THE ALUMINUM NITRIDE SINTERED COMPACT
PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact high in plasma resistance and corrosion resistance, in which the generation of particles is suppressed to reduce contamination, a component for a semiconductor manufacturing, and a method for producing the aluminum nitride sintered compact.SOLUTION: Provided is an aluminum nitride sintered compact having a tendency that a Y compound as a rare earth compound is largely present toward the surface compared with the inside of the aluminum nitride sintered compact. Thus, a thermal expansion difference is relaxed, and the risk of peeling caused by thermal expansion is low. Further, the crystal grains of the Y compound are present on the surface of the aluminum nitride sintered compact, and further, the ratio of the number of the grains in contact with the crystal grains of the other Y compound in the horizontal direction along the surface is the high one of 80% or more. In this way, even in the case a CDV shower head 1 is exposed to the atmosphere of plasma or the atmosphere of reaction gas, the aluminum nitride sintered compact is hard to be deteriorated, and the generation of contamination can be suppressed.SELECTED DRAWING: Figure 1
【課題】耐プラズマ性や耐腐食性が高く、パーティクルの発生を抑制してコンタミネーションを低減することができる窒化アルミニウム焼結体及び半導体製造用部品並びに窒化アルミニウム焼結体の製造方法を提供すること。【解決手段】希土類化合物であるY化合物が、窒化アルミニウム焼結体の内部に比べて表面に向かうほど多く存在する傾向を有している。よって、熱膨張差を緩和して、熱膨張による剥離の可能性が低い。また、窒化アルミニウム焼結体の表面には、Y化合物の結晶粒子が存在するとともに、結晶粒子のうち、表面に沿った横方向にて他のY化合物の結晶粒子と接触している粒子数の割合が80%以上と多い。従って、CDVシャワーヘッド1が、プラズマの雰囲気や反応ガスの雰囲気などに晒された場合でも、窒化アルミニウム焼結体は劣化しにくく、コンタミネーションの発生を抑制できる。【選択図】図1
ALUMINUM NITRIDE SINTERED COMPACT, COMPONENT FOR SEMICONDUCTOR MANUFACTURING, AND METHOD FOR PRODUCING THE ALUMINUM NITRIDE SINTERED COMPACT
窒化アルミニウム焼結体及び半導体製造用部品並びに窒化アルミニウム焼結体の製造方法
MITSUYA KOHEI (Autor:in) / OGAWA TAKAMICHI (Autor:in)
19.05.2016
Patent
Elektronische Ressource
Japanisch
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