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DIELECTRIC CERAMIC COMPOSITION AND CERAMIC ELECTRONIC COMPONENT
PROBLEM TO BE SOLVED: To provide a ceramic electronic component in which, even when the dielectric substance layer is made thinner, the capacity-temperature characteristic satisfies X8R characteristic, and in which the reliability under a high voltage environment is satisfactory, and to provide a dielectric ceramic composition that forms said dielectric substance layer.SOLUTION: Provided is a dielectric ceramic composition characterized in: containing a primary constituent having a perovskite crystal structure represented by a general formula of ABO, an oxide of Eu, an oxide of Ra(Sc, Er, Tm, Yb, Lu), an oxide of Rb(Y, Dy, Ho, Tb, Gd), and an oxide of Si; and when setting the content of the oxide of Eu per 100 moles of the primary constituent as α mole, the content of the oxide of Ra as β mole, the content of the oxide of Rb as γ mole, and the content of the oxide of Si as δ mole, satisfying 0.075≤α≤0.5, 0.5≤β≤3, 1.0≤γ≤4, 1.5≤δ≤5, and 0.030≤α/δ≤0.250, and also provided is a ceramic electronic component including a dielectric substance layer formed of said dielectric ceramic composition.SELECTED DRAWING: None
【課題】 誘電体層を薄層化しても容量温度特性がX8R特性を満足し、高電圧環境下での信頼性が良好なセラミック電子部品および前記誘電体層を形成する誘電体磁器組成物を提供する。【解決手段】 一般式ABO3で表されるペロブスカイト型結晶構造を有する主成分、Euの酸化物、Ra(Sc、Er、Tm、Yb、Lu)の酸化物、Rb(Y、Dy、Ho、Tb、Gd)の酸化物およびSiの酸化物を含み、前記主成分100モルに対する前記Euの酸化物の含有量をαモル、前記Raの酸化物の含有量をβモル、前記Rbの酸化物の含有量をγモル、前記Siの酸化物の含有量をδモルとすると、0.075≦α≦0.5、0.5≦β≦3、1.0≦γ≦4、1.5≦δ≦5、0.030≦α/δ≦0.250であることを特徴とする誘電体磁器組成物および前記誘電体磁器組成物から形成される誘電体層を有するセラミック電子部品。【選択図】 なし
DIELECTRIC CERAMIC COMPOSITION AND CERAMIC ELECTRONIC COMPONENT
PROBLEM TO BE SOLVED: To provide a ceramic electronic component in which, even when the dielectric substance layer is made thinner, the capacity-temperature characteristic satisfies X8R characteristic, and in which the reliability under a high voltage environment is satisfactory, and to provide a dielectric ceramic composition that forms said dielectric substance layer.SOLUTION: Provided is a dielectric ceramic composition characterized in: containing a primary constituent having a perovskite crystal structure represented by a general formula of ABO, an oxide of Eu, an oxide of Ra(Sc, Er, Tm, Yb, Lu), an oxide of Rb(Y, Dy, Ho, Tb, Gd), and an oxide of Si; and when setting the content of the oxide of Eu per 100 moles of the primary constituent as α mole, the content of the oxide of Ra as β mole, the content of the oxide of Rb as γ mole, and the content of the oxide of Si as δ mole, satisfying 0.075≤α≤0.5, 0.5≤β≤3, 1.0≤γ≤4, 1.5≤δ≤5, and 0.030≤α/δ≤0.250, and also provided is a ceramic electronic component including a dielectric substance layer formed of said dielectric ceramic composition.SELECTED DRAWING: None
【課題】 誘電体層を薄層化しても容量温度特性がX8R特性を満足し、高電圧環境下での信頼性が良好なセラミック電子部品および前記誘電体層を形成する誘電体磁器組成物を提供する。【解決手段】 一般式ABO3で表されるペロブスカイト型結晶構造を有する主成分、Euの酸化物、Ra(Sc、Er、Tm、Yb、Lu)の酸化物、Rb(Y、Dy、Ho、Tb、Gd)の酸化物およびSiの酸化物を含み、前記主成分100モルに対する前記Euの酸化物の含有量をαモル、前記Raの酸化物の含有量をβモル、前記Rbの酸化物の含有量をγモル、前記Siの酸化物の含有量をδモルとすると、0.075≦α≦0.5、0.5≦β≦3、1.0≦γ≦4、1.5≦δ≦5、0.030≦α/δ≦0.250であることを特徴とする誘電体磁器組成物および前記誘電体磁器組成物から形成される誘電体層を有するセラミック電子部品。【選択図】 なし
DIELECTRIC CERAMIC COMPOSITION AND CERAMIC ELECTRONIC COMPONENT
誘電体磁器組成物およびセラミック電子部品
KANEKO TOSHIHIKO (Autor:in) / FUJINO TATSUYA (Autor:in) / YOSHIDA TAKETAKA (Autor:in) / EBINA HARUKI (Autor:in) / MORIGASAKI NOBUTO (Autor:in)
23.09.2016
Patent
Elektronische Ressource
Japanisch
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