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INSULATOR COMPOSITION FOR CERAMIC PACKAGE AND MANUFACTURING METHOD THEREFOR
PROBLEM TO BE SOLVED: To provide an insulator composition for ceramic package having strength equal to HTC even in medium temperature (for example 1250 to 1400°C) range.SOLUTION: There is provided an insulator composition which contains AlOas a base material main component, where particle size of a starting material of the base material main component is 500 nm or less, content ratio of the base material main component to an additive has a range of 87 to 95 wt.% and particle size is in a range of 200 nm to 1.5 μm in fine structure of a sintered body, and is capable of containing further an electrode which is burnt at same time and mainly contains Ni and oxidation of Ni is suppressed through control of reduction atmosphere in a burning temperature range of 1250°C to 1400°C (concentration of His 3% or less).SELECTED DRAWING: Figure 2
【課題】中温(一例1250〜1400℃)範囲でもHTCと同等の強度を有するセラミックパッケージの為の絶縁体組成物の提供。【解決手段】Al2O3を母材主成分として含み、前記母材主成分の出発原料の粒子サイズが500nm以下であり、添加剤に対する前記母材主成分の含量比が87〜95wt%の範囲を有し、焼成体の微細構造において、粒子サイズは200nm〜1.5μmの範囲であり、又同時焼成され、且つ、Niを主成分とする電極をさらに含むことができ、1250℃〜1400℃の焼成温度範囲で還元雰囲気の制御(H2の濃度3%以下)を通じてNiの酸化が抑制される絶縁体組成物。【選択図】図2
INSULATOR COMPOSITION FOR CERAMIC PACKAGE AND MANUFACTURING METHOD THEREFOR
PROBLEM TO BE SOLVED: To provide an insulator composition for ceramic package having strength equal to HTC even in medium temperature (for example 1250 to 1400°C) range.SOLUTION: There is provided an insulator composition which contains AlOas a base material main component, where particle size of a starting material of the base material main component is 500 nm or less, content ratio of the base material main component to an additive has a range of 87 to 95 wt.% and particle size is in a range of 200 nm to 1.5 μm in fine structure of a sintered body, and is capable of containing further an electrode which is burnt at same time and mainly contains Ni and oxidation of Ni is suppressed through control of reduction atmosphere in a burning temperature range of 1250°C to 1400°C (concentration of His 3% or less).SELECTED DRAWING: Figure 2
【課題】中温(一例1250〜1400℃)範囲でもHTCと同等の強度を有するセラミックパッケージの為の絶縁体組成物の提供。【解決手段】Al2O3を母材主成分として含み、前記母材主成分の出発原料の粒子サイズが500nm以下であり、添加剤に対する前記母材主成分の含量比が87〜95wt%の範囲を有し、焼成体の微細構造において、粒子サイズは200nm〜1.5μmの範囲であり、又同時焼成され、且つ、Niを主成分とする電極をさらに含むことができ、1250℃〜1400℃の焼成温度範囲で還元雰囲気の制御(H2の濃度3%以下)を通じてNiの酸化が抑制される絶縁体組成物。【選択図】図2
INSULATOR COMPOSITION FOR CERAMIC PACKAGE AND MANUFACTURING METHOD THEREFOR
セラミックパッケージのための絶縁体組成物及びその製造方法
JOO JIN KYUNG (Autor:in) / KIM HYO JUNG (Autor:in) / YOON SUN HO (Autor:in) / KIM DOO YOUNG (Autor:in) / LEE BYOUNG HWA (Autor:in) / GU SIN IL (Autor:in)
08.12.2016
Patent
Elektronische Ressource
Japanisch
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