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MANUFACTURING METHOD OF LONG AFTERGLOW FLUOPHOR
PROBLEM TO BE SOLVED: To provide a manufacturing method of a long afterglow fluophor capable of simplifying manufacturing processes and being used for various fluophors depending aims.SOLUTION: There is provided a manufacturing method of a long afterglow fluophor having an electron beam irradiation process for irradiating an electron beam to the fluophor. There is provided a manufacturing method that preferably accelerating voltage of the electron beam is 0.5 to 3.0 MeV and irradiation dose of the electron beam is 1.0×10to 1.0×10e/cm2. There is provided a manufacturing method preferably further having a molding process for molding the fluophor at a pressure of 1 to 30 MPa before the electron beam irradiation process. There is provided a manufacturing method of the long afterglow fluophor that preferably the fluophor is a ZnS:Cu fluophor containing a Wurtzite phase.SELECTED DRAWING: Figure 4
【課題】製造工程を簡略にすることができるとともに、目的に応じて種々の蛍光体に用いることができる長残光蛍光体の製造方法の提供。【解決手段】蛍光体に電子線を照射する電子線照射工程を有する長残光蛍光体の製造方法。前記電子線の加速電圧が0.5〜3.0MeVであり、電子線の照射量が1.0×1014〜1.0×1020e/cm2であることが好ましい製造方法。また前記電子線照射工程の前に、前記蛍光体を1〜30MPaの圧力で成形する成形工程をさらに有することが好ましい製造方法。前記蛍光体が、Wurtzite相を含むZnS:Cu蛍光体であることが、好ましい長残光蛍光体の製造方法。【選択図】図4
MANUFACTURING METHOD OF LONG AFTERGLOW FLUOPHOR
PROBLEM TO BE SOLVED: To provide a manufacturing method of a long afterglow fluophor capable of simplifying manufacturing processes and being used for various fluophors depending aims.SOLUTION: There is provided a manufacturing method of a long afterglow fluophor having an electron beam irradiation process for irradiating an electron beam to the fluophor. There is provided a manufacturing method that preferably accelerating voltage of the electron beam is 0.5 to 3.0 MeV and irradiation dose of the electron beam is 1.0×10to 1.0×10e/cm2. There is provided a manufacturing method preferably further having a molding process for molding the fluophor at a pressure of 1 to 30 MPa before the electron beam irradiation process. There is provided a manufacturing method of the long afterglow fluophor that preferably the fluophor is a ZnS:Cu fluophor containing a Wurtzite phase.SELECTED DRAWING: Figure 4
【課題】製造工程を簡略にすることができるとともに、目的に応じて種々の蛍光体に用いることができる長残光蛍光体の製造方法の提供。【解決手段】蛍光体に電子線を照射する電子線照射工程を有する長残光蛍光体の製造方法。前記電子線の加速電圧が0.5〜3.0MeVであり、電子線の照射量が1.0×1014〜1.0×1020e/cm2であることが好ましい製造方法。また前記電子線照射工程の前に、前記蛍光体を1〜30MPaの圧力で成形する成形工程をさらに有することが好ましい製造方法。前記蛍光体が、Wurtzite相を含むZnS:Cu蛍光体であることが、好ましい長残光蛍光体の製造方法。【選択図】図4
MANUFACTURING METHOD OF LONG AFTERGLOW FLUOPHOR
長残光蛍光体の製造方法
INAGAKI TORU (Autor:in) / HIROMI MITSUNORI (Autor:in) / ISHIGAKI MASA (Autor:in)
14.09.2017
Patent
Elektronische Ressource
Japanisch
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