Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
DIELECTRIC THIN FILM ELEMENT
PROBLEM TO BE SOLVED: To provide a dielectric thin film element including a dielectric thin film with a high dielectric constant and having excellent DC bias characteristic and temperature characteristic.SOLUTION: A dielectric thin film element includes a first electrode, a first dielectric thin film formed on the first electrode, a second dielectric thin film formed on the first dielectric thin film, and a second electrode formed on the second dielectric thin film. The first dielectric thin film and the second dielectric thin film contain BaO and TiOas main components. When expressed by mBaO-nTiO, the first dielectric thin film has a relation between m and n satisfying 0.40≤m/n≤0.60. When expressed by mBaO-nTiO, the second dielectric thin film has a relation between m and n satisfying 0.90≤m/n≤1.10.SELECTED DRAWING: Figure 1
【課題】高い比誘電率を有する誘電体薄膜を備え、良好なＤＣバイアス特性と、良好な温度特性を示す誘電体薄膜素子を提供する。【解決手段】第１の電極と、前記第１の電極上に形成された第１の誘電体薄膜と、前記第１の誘電体薄膜上に形成された第２の誘電体薄膜と、前記第２の誘電体薄膜の上に形成された第２の電極と、を備えた誘電体薄膜素子であって、前記第１の誘電体薄膜及び前記第２の誘電体薄膜は、ＢａＯとＴｉＯ２とを主成分とし、前記第１の誘電体薄膜は、ｍＢａＯ−ｎＴｉＯ２で表した場合、ｍとｎとの関係が０．４０≦ｍ／ｎ≦０．６０であり、前記第２の誘電体薄膜は、ｍＢａＯ−ｎＴｉＯ２で表した場合、ｍとｎとの関係が０．９０≦ｍ／ｎ≦１．１０で表されることを特徴とする。【選択図】図１
DIELECTRIC THIN FILM ELEMENT
PROBLEM TO BE SOLVED: To provide a dielectric thin film element including a dielectric thin film with a high dielectric constant and having excellent DC bias characteristic and temperature characteristic.SOLUTION: A dielectric thin film element includes a first electrode, a first dielectric thin film formed on the first electrode, a second dielectric thin film formed on the first dielectric thin film, and a second electrode formed on the second dielectric thin film. The first dielectric thin film and the second dielectric thin film contain BaO and TiOas main components. When expressed by mBaO-nTiO, the first dielectric thin film has a relation between m and n satisfying 0.40≤m/n≤0.60. When expressed by mBaO-nTiO, the second dielectric thin film has a relation between m and n satisfying 0.90≤m/n≤1.10.SELECTED DRAWING: Figure 1
【課題】高い比誘電率を有する誘電体薄膜を備え、良好なＤＣバイアス特性と、良好な温度特性を示す誘電体薄膜素子を提供する。【解決手段】第１の電極と、前記第１の電極上に形成された第１の誘電体薄膜と、前記第１の誘電体薄膜上に形成された第２の誘電体薄膜と、前記第２の誘電体薄膜の上に形成された第２の電極と、を備えた誘電体薄膜素子であって、前記第１の誘電体薄膜及び前記第２の誘電体薄膜は、ＢａＯとＴｉＯ２とを主成分とし、前記第１の誘電体薄膜は、ｍＢａＯ−ｎＴｉＯ２で表した場合、ｍとｎとの関係が０．４０≦ｍ／ｎ≦０．６０であり、前記第２の誘電体薄膜は、ｍＢａＯ−ｎＴｉＯ２で表した場合、ｍとｎとの関係が０．９０≦ｍ／ｎ≦１．１０で表されることを特徴とする。【選択図】図１
DIELECTRIC THIN FILM ELEMENT
誘電体薄膜素子
OTSUKI SHIRO (Autor:in) / HARADA YOSHINORI (Autor:in) / KOSUDA MASANORI (Autor:in) / SUZUKI SHOTA (Autor:in) / TAKAHASHI KAZUKO (Autor:in)
05.10.2017
Patent
Elektronische Ressource
Japanisch
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