Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
DIELECTRIC COMPOSITION, ELECTRONIC COMPONENT, AND LAMINATE ELECTRONIC COMPONENT
To provide a dielectric composition relatively high in dielectric constant under high temperature environment at 250°C and small in temperature variation of electrostatic capacitance at -55°C to 250°C.SOLUTION: There is provided a dielectric composition having a main component and a first accessory component. The main component contains a tungsten copper- type composite oxide represented by the chemical formula BaR(TiZr)(NbTa)O. 2.05≤α≤2.25, 0.40≤x≤1.00, 0.05≤y≤0.60. The first accessory component contains oxide of V and oxide W as essential components, and further contains oxide of Si and/or oxide of Ge. 0.30≤C≤10.0, 0.10≤C≤2.5, 5.00≤C+C≤20.00, 3.0≤C/C≤20.0, in which content of V oxide is C, content of W oxide is C, content of Si oxide is C, and content of Ge oxide is C.SELECTED DRAWING: Figure 1
【課題】２５０℃の高温雰囲気下において比誘電率が比較的高く、−５５℃〜２５０℃において静電容量の温度変化率が小さい誘電体組成物等を提供する。【解決手段】主成分と第１の副成分とを有する誘電体組成物である。主成分が化学式ＢａαＲ（Ｔｉ１．００−ｘＺｒｘ）２．００（Ｎｂ１．００−ｙＴａｙ）３．００Ｏ１３．００+αで表されるタングステンブロンズ型複合酸化物を含む。２．０５≦α≦２．２５、０．４０≦ｘ≦１．００、０．０５≦ｙ≦０．６０である。第１の副成分が、Ｖの酸化物およびＷの酸化物を必須成分として含み、さらにＳｉの酸化物および／またはＧｅの酸化物を含む。Ｖの酸化物の含有量をＣＶ、Ｗの酸化物の含有量をＣＷ、Ｓｉの酸化物の含有量をＣＳｉ、Ｇｅの酸化物の含有量をＣＧｅとして、０．３０≦ＣＶ≦１０．０、０．１０≦ＣＷ≦２．５、５．００≦ＣＳｉ＋ＣＧｅ≦２０．００、３．０≦ＣＶ／ＣＷ≦２０．０である。【選択図】図１
DIELECTRIC COMPOSITION, ELECTRONIC COMPONENT, AND LAMINATE ELECTRONIC COMPONENT
To provide a dielectric composition relatively high in dielectric constant under high temperature environment at 250°C and small in temperature variation of electrostatic capacitance at -55°C to 250°C.SOLUTION: There is provided a dielectric composition having a main component and a first accessory component. The main component contains a tungsten copper- type composite oxide represented by the chemical formula BaR(TiZr)(NbTa)O. 2.05≤α≤2.25, 0.40≤x≤1.00, 0.05≤y≤0.60. The first accessory component contains oxide of V and oxide W as essential components, and further contains oxide of Si and/or oxide of Ge. 0.30≤C≤10.0, 0.10≤C≤2.5, 5.00≤C+C≤20.00, 3.0≤C/C≤20.0, in which content of V oxide is C, content of W oxide is C, content of Si oxide is C, and content of Ge oxide is C.SELECTED DRAWING: Figure 1
【課題】２５０℃の高温雰囲気下において比誘電率が比較的高く、−５５℃〜２５０℃において静電容量の温度変化率が小さい誘電体組成物等を提供する。【解決手段】主成分と第１の副成分とを有する誘電体組成物である。主成分が化学式ＢａαＲ（Ｔｉ１．００−ｘＺｒｘ）２．００（Ｎｂ１．００−ｙＴａｙ）３．００Ｏ１３．００+αで表されるタングステンブロンズ型複合酸化物を含む。２．０５≦α≦２．２５、０．４０≦ｘ≦１．００、０．０５≦ｙ≦０．６０である。第１の副成分が、Ｖの酸化物およびＷの酸化物を必須成分として含み、さらにＳｉの酸化物および／またはＧｅの酸化物を含む。Ｖの酸化物の含有量をＣＶ、Ｗの酸化物の含有量をＣＷ、Ｓｉの酸化物の含有量をＣＳｉ、Ｇｅの酸化物の含有量をＣＧｅとして、０．３０≦ＣＶ≦１０．０、０．１０≦ＣＷ≦２．５、５．００≦ＣＳｉ＋ＣＧｅ≦２０．００、３．０≦ＣＶ／ＣＷ≦２０．０である。【選択図】図１
DIELECTRIC COMPOSITION, ELECTRONIC COMPONENT, AND LAMINATE ELECTRONIC COMPONENT
誘電体組成物、電子部品および積層電子部品
TAKAHASHI TETSUHIRO (Autor:in) / SUZUKI TOMOKO (Autor:in) / NOMURA RYOTA (Autor:in)
24.06.2019
Patent
Elektronische Ressource
Japanisch
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