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ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS, BASE MATERIAL PLATE FOR ELECTRODE PLATE, AND MANUFACTURING METHOD FOR ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS
To provide an electrode plate for a plasma processing apparatus, on which not only a surface but also an inner wall of a vent hole have high plasma resistance and are hard to be worn and torn.SOLUTION: A manufacturing method for an electrode plate for a plasma processing apparatus includes: a through hole formation step of forming on a base material plate a plurality of through holes having a taper part whose diameter increases from the inside of the base material plate to the outside thereof; a CVD step of depositing a coating material containing silicon carbide as its primary component on the base material plate having the through holes using Chemical Vapor Deposition method to fill the inside of the through holes with the coating material and coat the base material plate's surface to form a coating layer; and a vent hole formation step of forming a hole, which is concentric with and has a diameter smaller than that of each of the through holes, so that the hole penetrates the base material plate in the plate's thickness direction to form a plurality of vent holes.SELECTED DRAWING: Figure 1
【課題】表面だけでなく通気孔の内壁も耐プラズマ性が高く消耗しにくいプラズマ処理装置用電極板を提供する。【解決手段】基材板に、前記基材板の内方より外方に向けて拡径するテーパ部を有する複数の貫通孔を形成する貫通孔形成工程と、前記貫通孔を有する前記基材板に炭化珪素を主成分とするコーティング材を化学気相成長法により堆積させて、前記貫通孔内に前記コーティング材を充填するとともに前記基材板の表面を被覆してコーティング層を形成するCVD工程と、前記貫通孔と同心で前記貫通孔よりも小径の孔を前記基材板の厚さ方向に貫通形成して、複数の通気孔を形成する通気孔形成工程とを有する。【選択図】図1
ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS, BASE MATERIAL PLATE FOR ELECTRODE PLATE, AND MANUFACTURING METHOD FOR ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS
To provide an electrode plate for a plasma processing apparatus, on which not only a surface but also an inner wall of a vent hole have high plasma resistance and are hard to be worn and torn.SOLUTION: A manufacturing method for an electrode plate for a plasma processing apparatus includes: a through hole formation step of forming on a base material plate a plurality of through holes having a taper part whose diameter increases from the inside of the base material plate to the outside thereof; a CVD step of depositing a coating material containing silicon carbide as its primary component on the base material plate having the through holes using Chemical Vapor Deposition method to fill the inside of the through holes with the coating material and coat the base material plate's surface to form a coating layer; and a vent hole formation step of forming a hole, which is concentric with and has a diameter smaller than that of each of the through holes, so that the hole penetrates the base material plate in the plate's thickness direction to form a plurality of vent holes.SELECTED DRAWING: Figure 1
【課題】表面だけでなく通気孔の内壁も耐プラズマ性が高く消耗しにくいプラズマ処理装置用電極板を提供する。【解決手段】基材板に、前記基材板の内方より外方に向けて拡径するテーパ部を有する複数の貫通孔を形成する貫通孔形成工程と、前記貫通孔を有する前記基材板に炭化珪素を主成分とするコーティング材を化学気相成長法により堆積させて、前記貫通孔内に前記コーティング材を充填するとともに前記基材板の表面を被覆してコーティング層を形成するCVD工程と、前記貫通孔と同心で前記貫通孔よりも小径の孔を前記基材板の厚さ方向に貫通形成して、複数の通気孔を形成する通気孔形成工程とを有する。【選択図】図1
ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS, BASE MATERIAL PLATE FOR ELECTRODE PLATE, AND MANUFACTURING METHOD FOR ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS
プラズマ処理装置用電極板、電極板用基材板およびプラズマ処理装置用電極板の製造方法
NOMURA SATOSHI (Autor:in)
15.08.2019
Patent
Elektronische Ressource
Japanisch
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