Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
POLYSILOCARB BASED SILICON CARBIDE MATERIALS, APPLICATIONS AND DEVICES
To provide a method of making silicon carbide (SiC) materials having 3-nines, 4-nines and 6-nines purity.SOLUTION: The method comprises: providing a solvent free liquid including silicon, carbon and oxygen; curing the liquid to provide a cured material consisting essentially of silicon, carbon and oxygen; keeping the cured material at a temperature of less than 150°C; transforming the cured material into a ceramic material consisting essentially of silicon, carbon and oxygen; and removing essentially all of the oxygen from the ceramic material.SELECTED DRAWING: None
【課題】３ナイン、４ナイン、６ナインの純度を有する炭化ケイ素（ＳｉＣ）材料の製造方法。【解決手段】シリコン、炭素および酸素を含み、溶剤を含まない液体を提供し、該液体を硬化して、シリコン、炭素および酸素から本質的に成る硬化物を提供し、１５０℃未満の温度で硬化物を保持することで、シリコン、炭素および酸素から本質的に成るセラミック材料へ硬化物を変換し、セラミック材料から酸素をすべて本質的に取り除く。【選択図】なし
POLYSILOCARB BASED SILICON CARBIDE MATERIALS, APPLICATIONS AND DEVICES
To provide a method of making silicon carbide (SiC) materials having 3-nines, 4-nines and 6-nines purity.SOLUTION: The method comprises: providing a solvent free liquid including silicon, carbon and oxygen; curing the liquid to provide a cured material consisting essentially of silicon, carbon and oxygen; keeping the cured material at a temperature of less than 150°C; transforming the cured material into a ceramic material consisting essentially of silicon, carbon and oxygen; and removing essentially all of the oxygen from the ceramic material.SELECTED DRAWING: None
【課題】３ナイン、４ナイン、６ナインの純度を有する炭化ケイ素（ＳｉＣ）材料の製造方法。【解決手段】シリコン、炭素および酸素を含み、溶剤を含まない液体を提供し、該液体を硬化して、シリコン、炭素および酸素から本質的に成る硬化物を提供し、１５０℃未満の温度で硬化物を保持することで、シリコン、炭素および酸素から本質的に成るセラミック材料へ硬化物を変換し、セラミック材料から酸素をすべて本質的に取り除く。【選択図】なし
POLYSILOCARB BASED SILICON CARBIDE MATERIALS, APPLICATIONS AND DEVICES
ポリシロカルブに基づいた炭化ケイ素材料、用途および装置
ASHISH P DIWANJI (Autor:in) / ANDREW R HOPKINS (Autor:in) / WALTER J SHERWOOD (Autor:in) / DOUGLAS M DUKES (Autor:in) / GLENN SANDGREN (Autor:in) / MARK S LAND (Autor:in) / BRIAN L BENAC (Autor:in)
18.02.2021
Patent
Elektronische Ressource
Japanisch
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