Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
COPPER/CERAMIC ASSEMBLY, INSULATION CIRCUIT BOARD, METHOD FOR MANUFACTURING COPPER/CERAMIC ASSEMBLY, AND METHOD FOR MANUFACTURING INSULATION CIRCUIT BOARD
To provide a copper/ceramic assembly which is excellent in insulation properties, an insulation circuit board, a method for manufacturing a copper/ceramic assembly, and a method for manufacturing an insulation circuit board.SOLUTION: A copper/ceramic assembly is constituted by joining a copper member composed of copper or a copper alloy and a ceramic member composed of silicon nitride. A maximum length of an Mg-N compound phase present in a joint interface between the copper member and the ceramic member is less than 100 nm. A number density of the Mg-N compound phase with a length of 10 nm or longer and shorter than 100 nm in unit length along the joint interface is less than 8 pieces/μm.SELECTED DRAWING: None
【課題】絶縁性に優れた銅／セラミックス接合体、絶縁回路基板、及び、銅／セラミックス接合体の製造方法、絶縁回路基板の製造方法を提供する。【解決手段】銅又は銅合金からなる銅部材と、窒化ケイ素からなるセラミックス部材とが接合されてなる銅／セラミックス接合体であって、前記銅部材と前記セラミックス部材との接合界面に存在するＭｇ−Ｎ化合物相の最大長さが１００ｎｍ未満とされ、前記接合界面に沿った単位長さにおいて、長さが１０ｎｍ以上１００ｎｍ未満の範囲内の前記Ｍｇ−Ｎ化合物相の個数密度が８個／μｍ未満とされていることを特徴とする。【選択図】なし
COPPER/CERAMIC ASSEMBLY, INSULATION CIRCUIT BOARD, METHOD FOR MANUFACTURING COPPER/CERAMIC ASSEMBLY, AND METHOD FOR MANUFACTURING INSULATION CIRCUIT BOARD
To provide a copper/ceramic assembly which is excellent in insulation properties, an insulation circuit board, a method for manufacturing a copper/ceramic assembly, and a method for manufacturing an insulation circuit board.SOLUTION: A copper/ceramic assembly is constituted by joining a copper member composed of copper or a copper alloy and a ceramic member composed of silicon nitride. A maximum length of an Mg-N compound phase present in a joint interface between the copper member and the ceramic member is less than 100 nm. A number density of the Mg-N compound phase with a length of 10 nm or longer and shorter than 100 nm in unit length along the joint interface is less than 8 pieces/μm.SELECTED DRAWING: None
【課題】絶縁性に優れた銅／セラミックス接合体、絶縁回路基板、及び、銅／セラミックス接合体の製造方法、絶縁回路基板の製造方法を提供する。【解決手段】銅又は銅合金からなる銅部材と、窒化ケイ素からなるセラミックス部材とが接合されてなる銅／セラミックス接合体であって、前記銅部材と前記セラミックス部材との接合界面に存在するＭｇ−Ｎ化合物相の最大長さが１００ｎｍ未満とされ、前記接合界面に沿った単位長さにおいて、長さが１０ｎｍ以上１００ｎｍ未満の範囲内の前記Ｍｇ−Ｎ化合物相の個数密度が８個／μｍ未満とされていることを特徴とする。【選択図】なし
COPPER/CERAMIC ASSEMBLY, INSULATION CIRCUIT BOARD, METHOD FOR MANUFACTURING COPPER/CERAMIC ASSEMBLY, AND METHOD FOR MANUFACTURING INSULATION CIRCUIT BOARD
銅／セラミックス接合体、絶縁回路基板、及び、銅／セラミックス接合体の製造方法、絶縁回路基板の製造方法
TERASAKI NOBUYUKI (Autor:in)
17.06.2021
Patent
Elektronische Ressource
Japanisch
| Europäisches Patentamt | 2021
| Europäisches Patentamt | 2019