Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
EVALUATION METHOD OF GROUND IMPROVEMENT EFFECT BY CHEMICAL INJECTION METHOD
To provide an evaluation method of a ground improvement effect which can evaluate uniaxial compression strength of an improvement body by measuring an electric specific resistance after improvement.SOLUTION: An evaluation method of a ground improvement effect by a chemical injection method comprises first to third steps. In the first step, a first correlation diagram of silica concentration (SiO2) and uniaxial compression strength (qu) is obtained and a second correlation diagram of silica concentration (SiO2) and electric specific resistance (R) is obtained in advance. In the second step, a target silica concentration (SiO2) is obtained from a target uniaxial compression strength (quck) based on the first correlation diagram and a target electric specific resistance (Rk) is set from the target silica concentration (SiO2) based on the second correlation diagram. In the third step, an electric specific resistance (Rimp) by an electric logging is measured using a penetration hole vertically formed in a ground after ground improvement, and it is determined whether the target uniaxial compression strength (quck) is secured according to whether a condition that the electric specific resistance (Rimp) of the improved ground is equal to or less than the target electric specific resistance (Rk) is satisfied.SELECTED DRAWING: Figure 1
【課題】改良後の電気比抵抗の計測によって、改良体の一軸圧縮強さを評価可能とした地盤改良効果の評価方法を提供する。【解決手段】事前に、シリカ濃度(SiO2)と一軸圧縮強さ(ｑu)との第１相関図を得るとともに、シリカ濃度(SiO2)と電気比抵抗(R)との第２相関図を得る１手順と、前記第１相関図に基づいて、目標とする一軸圧縮強さ(ｑuck)から目標とするシリカ濃度(SiO2)を求め、次いで前記第２相関図に基づいて、前記目標とするシリカ濃度(SiO2)から目標とする電気比抵抗(Rk)を設定する第２手順と、地盤改良後に、地盤に縦方向に形成した貫入孔を用いて電気検層による電気比抵抗（Rimp）を計測し、改良地盤の電気比抵抗（Rimp）が前記目標とする電気比抵抗(Rk)以下である条件を満たすかどうかで、目標とする一軸圧縮強さ(ｑuck)が確保されているかを判断する第３手順からなる。【選択図】図１
EVALUATION METHOD OF GROUND IMPROVEMENT EFFECT BY CHEMICAL INJECTION METHOD
To provide an evaluation method of a ground improvement effect which can evaluate uniaxial compression strength of an improvement body by measuring an electric specific resistance after improvement.SOLUTION: An evaluation method of a ground improvement effect by a chemical injection method comprises first to third steps. In the first step, a first correlation diagram of silica concentration (SiO2) and uniaxial compression strength (qu) is obtained and a second correlation diagram of silica concentration (SiO2) and electric specific resistance (R) is obtained in advance. In the second step, a target silica concentration (SiO2) is obtained from a target uniaxial compression strength (quck) based on the first correlation diagram and a target electric specific resistance (Rk) is set from the target silica concentration (SiO2) based on the second correlation diagram. In the third step, an electric specific resistance (Rimp) by an electric logging is measured using a penetration hole vertically formed in a ground after ground improvement, and it is determined whether the target uniaxial compression strength (quck) is secured according to whether a condition that the electric specific resistance (Rimp) of the improved ground is equal to or less than the target electric specific resistance (Rk) is satisfied.SELECTED DRAWING: Figure 1
【課題】改良後の電気比抵抗の計測によって、改良体の一軸圧縮強さを評価可能とした地盤改良効果の評価方法を提供する。【解決手段】事前に、シリカ濃度(SiO2)と一軸圧縮強さ(ｑu)との第１相関図を得るとともに、シリカ濃度(SiO2)と電気比抵抗(R)との第２相関図を得る１手順と、前記第１相関図に基づいて、目標とする一軸圧縮強さ(ｑuck)から目標とするシリカ濃度(SiO2)を求め、次いで前記第２相関図に基づいて、前記目標とするシリカ濃度(SiO2)から目標とする電気比抵抗(Rk)を設定する第２手順と、地盤改良後に、地盤に縦方向に形成した貫入孔を用いて電気検層による電気比抵抗（Rimp）を計測し、改良地盤の電気比抵抗（Rimp）が前記目標とする電気比抵抗(Rk)以下である条件を満たすかどうかで、目標とする一軸圧縮強さ(ｑuck)が確保されているかを判断する第３手順からなる。【選択図】図１
EVALUATION METHOD OF GROUND IMPROVEMENT EFFECT BY CHEMICAL INJECTION METHOD
薬液注入工法による地盤改良効果の評価方法
SHIMOZAKA KENJI (Autor:in) / MURATA YOSHINOBU (Autor:in) / KARIYA KEIZO (Autor:in) / YASHIMA ATSUSHI (Autor:in) / HANADA YUKI (Autor:in) / YAMAMOTO KEIGO (Autor:in) / ONO YASUTOSHI (Autor:in) / ITO TAKAYOSHI (Autor:in)
02.03.2023
Patent
Elektronische Ressource
Japanisch
IPC:
E02D
FOUNDATIONS
,
Gründungen
GROUND IMPROVEMENT METHOD BY CHEMICAL INJECTION, AND GROUND IMPROVEMENT OPTIMIZATION METHOD
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