BONDING MATERIAL, METHOD FOR PRODUCING BONDING MATERIAL, AND METHOD FOR PRODUCING BONDING BODY: Fid-Bau Portal

BONDING MATERIAL, METHOD FOR PRODUCING BONDING MATERIAL, AND METHOD FOR PRODUCING BONDING BODY

MORI AKIHITO / SEKIGUCHI TAKUYA / MORII MASATO

To provide a bonding material for forming a bonded part between conductive components and a method for manufacturing the same, in which cracking of the dried bonding material is suppressed and bonding defects at the bonded part are suppressed by drying the bonding material and then firing it, even if the bonding material does not substantially contain resin at the time when the bonded part is formed.SOLUTION: A method for producing a bonding material includes a blending step of blending silver particles (A) and silver particles (B), wherein the silver particles (A) have a D50 of 0.2 to 0.5 μm, the silver particles (A) have an exothermic peak temperature of 210 to 225°C as observed by TG/DTA, the silver particles (B) have a D50 of 0.2 to 0.7 μm, the silver particles (B) have an exothermic peak temperature of 168 to 180°C as observed by TG/DTA, and at the time when the exothermic peak of a mixture of the silver particles (A) and the silver particles (B) blended in the same amounts as those blended in the blending step is observed by TG/DTA, its exothermic peak temperature is 183 to 224°C.SELECTED DRAWING: None

【課題】導電性の部品同士を接合する接合部を形成するための接合材とその製造方法であって、接合材を乾燥させてから焼成することで、接合部を形成するときに、接合材が実質的に樹脂を含有していなくても、乾燥済み接合材の割れが抑制され、接合部での接合不良が抑制される接合材とその製造方法の提供。【解決手段】銀粒子（Ａ）と銀粒子（Ｂ）を配合する配合工程を有し、銀粒子（Ａ）のＤ５０が０．２～０．５μｍであり、ＴＧ／ＤＴＡで観測した銀粒子（Ａ）の発熱ピークの温度が２１０～２２５℃であり、銀粒子（Ｂ）のＤ５０が０．２～０．７μｍであり、ＴＧ／ＤＴＡで観測した銀粒子（Ｂ）の発熱ピークの温度が１６８～１８０℃であり、前記配合工程における配合量と同量の銀粒子（Ａ）及び銀粒子（Ｂ）の混合物の発熱ピークを、ＴＧ／ＤＴＡで観測したとき、前記発熱ピークの温度が１８３～２２４℃である、接合材の製造方法。【選択図】なし

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