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Ion-implanted, anti-reflective layer formed within sapphire material
A sapphire structure including an ion-implanted, anti-reflective layer and a method of forming an ion-implanted, anti-reflective layer within a sapphire component is disclosed. The method includes forming an ion-implanted layer in a sapphire material at a first depth, and annealing the sapphire material to a second depth. The second depth may be greater than or equal to the first depth. The ion-implanted layer may have a first index of refraction, and the sapphire material may have a second index of refraction different from the first index of refraction.
Ion-implanted, anti-reflective layer formed within sapphire material
A sapphire structure including an ion-implanted, anti-reflective layer and a method of forming an ion-implanted, anti-reflective layer within a sapphire component is disclosed. The method includes forming an ion-implanted layer in a sapphire material at a first depth, and annealing the sapphire material to a second depth. The second depth may be greater than or equal to the first depth. The ion-implanted layer may have a first index of refraction, and the sapphire material may have a second index of refraction different from the first index of refraction.
Ion-implanted, anti-reflective layer formed within sapphire material
ROGERS MATTHEW S (Autor:in) / YUEN AVERY P (Autor:in) / ZHAO XIANWEI (Autor:in)
07.05.2019
Patent
Elektronische Ressource
Englisch
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