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Etchant composition and manufacturing method of metal pattern using the same
An etchant composition is presented. The composition includes: 18 wt % to 25 wt % of a first organic acid compound; 15 wt % to 20 wt % of a second organic acid compound; 8.1 wt % to 9.9 wt % of an inorganic acid compound; 1 wt % to 4.9 wt % of a sulfonic acid compound; 10 wt % to 20 wt % of a hydrogen sulfate salt compound; 1 wt % to 5 wt % of a nitrogen-containing dicarbonyl compound; 1 wt % to 5 wt % of an amino acid derivative compound; 0.1 wt % to 2 wt % of an iron-containing oxidizing agent compound; and a balance amount of water.
Etchant composition and manufacturing method of metal pattern using the same
An etchant composition is presented. The composition includes: 18 wt % to 25 wt % of a first organic acid compound; 15 wt % to 20 wt % of a second organic acid compound; 8.1 wt % to 9.9 wt % of an inorganic acid compound; 1 wt % to 4.9 wt % of a sulfonic acid compound; 10 wt % to 20 wt % of a hydrogen sulfate salt compound; 1 wt % to 5 wt % of a nitrogen-containing dicarbonyl compound; 1 wt % to 5 wt % of an amino acid derivative compound; 0.1 wt % to 2 wt % of an iron-containing oxidizing agent compound; and a balance amount of water.
Etchant composition and manufacturing method of metal pattern using the same
PARK JONG HEE (Autor:in) / KIM KI TAE (Autor:in) / KIM JIN SEOCK (Autor:in) / KIM GYU-PO (Autor:in) / SHIN HYUN-CHEOL (Autor:in) / LEE DAE-WOO (Autor:in) / LEE SANG-HYUK (Autor:in)
07.04.2020
Patent
Elektronische Ressource
Englisch
IPC:
C09K
Materialien für Anwendungen, soweit nicht anderweitig vorgesehen
,
MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR
/
C04B
Kalk
,
LIME
/
C23F
Nichtmechanisches Entfernen metallischer Stoffe von Oberflächen
,
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACES
/
G03F
Fotomechanische Herstellung strukturierter oder gemusterter Oberflächen, z.B. zum Drucken, zum Herstellen von Halbleiterbauelementen
,
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
ETCHANT COMPOSITION AND MANUFACTURING METHOD OF METAL PATTERN USING THE SAME
Europäisches Patentamt | 2019
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