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SiC crucible, SiC sintered body, and method of producing SiC single crystal
In the present invention, in producing a SiC single crystal in accordance with a solution method, a crucible containing SiC as a main component and having an oxygen content of 100 ppm or less is used as the crucible to be used as a container for a Si—C solution. In another embodiment, a sintered body containing SiC as a main component and having an oxygen content of 100 ppm or less is placed in the crucible to be used as a container for a Si—C solution. The SiC crucible and SiC sintered body are obtained by molding and baking a SiC raw-material powder having an oxygen content of 2000 ppm or less. SiC, which is the main component of these, serves as a source for Si and C and allows Si and C to elute into the Si—C solution by heating.
SiC crucible, SiC sintered body, and method of producing SiC single crystal
In the present invention, in producing a SiC single crystal in accordance with a solution method, a crucible containing SiC as a main component and having an oxygen content of 100 ppm or less is used as the crucible to be used as a container for a Si—C solution. In another embodiment, a sintered body containing SiC as a main component and having an oxygen content of 100 ppm or less is placed in the crucible to be used as a container for a Si—C solution. The SiC crucible and SiC sintered body are obtained by molding and baking a SiC raw-material powder having an oxygen content of 2000 ppm or less. SiC, which is the main component of these, serves as a source for Si and C and allows Si and C to elute into the Si—C solution by heating.
SiC crucible, SiC sintered body, and method of producing SiC single crystal
SHINYA NAOFUMI (Autor:in) / HAMAGUCHI YU (Autor:in) / YAMAGATA NORIO (Autor:in) / YAMADA OSAMU (Autor:in) / MINOWA TAKEHISA (Autor:in)
13.09.2022
Patent
Elektronische Ressource
Englisch
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