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EMISSIVITY CONTROLLED COATINGS FOR SEMICONDUCTOR CHAMBER COMPONENTS
A component for a semiconductor processing chamber, the component including a substrate and a coating layer provided on a surface of the substrate, wherein the coating layer includes at least a first coating layer having a thermal emissivity of more than 0.98 to 1, having plasma resistance, and having a color value L in a range of 35 to 40 through a thickness direction thereof.
EMISSIVITY CONTROLLED COATINGS FOR SEMICONDUCTOR CHAMBER COMPONENTS
A component for a semiconductor processing chamber, the component including a substrate and a coating layer provided on a surface of the substrate, wherein the coating layer includes at least a first coating layer having a thermal emissivity of more than 0.98 to 1, having plasma resistance, and having a color value L in a range of 35 to 40 through a thickness direction thereof.
EMISSIVITY CONTROLLED COATINGS FOR SEMICONDUCTOR CHAMBER COMPONENTS
NAIM MAHMOOD (Autor:in) / HAMMERICH DAVID (Autor:in)
31.12.2015
Patent
Elektronische Ressource
Englisch
IPC:
C23C
Beschichten metallischer Werkstoffe
,
COATING METALLIC MATERIAL
/
C01F
COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
,
Verbindungen der Metalle Beryllium, Magnesium, Aluminium, Calcium, Strontium, Barium, Radium, Thorium oder der Seltenen Erden
/
C04B
Kalk
,
LIME
/
C09K
Materialien für Anwendungen, soweit nicht anderweitig vorgesehen
,
MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR
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