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SINGLE PHASE LEAD-FREE CUBIC PYROCHLORE BISMUTH ZINC NIOBATE-BASED DIELECTRIC MATERIALS AND PROCESSES FOR MANUFACTURE
Both single phase lead-free cubic pyrochlore bismuth zinc niobate (BZN)-based dielectric materials with a chemical composition of Bi1.5Zn(0.5+y)Nb(1.5−x)Ta(x)O(6.5+y), with 0≦x<0.23 and 0≦y<0.9 and films with these average compositions with Bi2O3 particles in an amorphous matrix and a process of manufacture thereof. The crystalline BZNT-based dielectric material has a relative permittivity of at least 120, a maximum applied electric field of at least 4.0 MV/cm at 10 kHz, a maximum energy storage at 25° C. and 10 kHz of at least 50 J/cm3 and a maximum energy storage at 200° C. and 10 kHz of at least 22 J/cm3. The process is a wet chemical process that produces thin films of Bi1.5Zn(0.5+y)Nb(1.5−x)Ta(x)O(6.5+y) without the use of 2-methoxyethanol and pyridine.
SINGLE PHASE LEAD-FREE CUBIC PYROCHLORE BISMUTH ZINC NIOBATE-BASED DIELECTRIC MATERIALS AND PROCESSES FOR MANUFACTURE
Both single phase lead-free cubic pyrochlore bismuth zinc niobate (BZN)-based dielectric materials with a chemical composition of Bi1.5Zn(0.5+y)Nb(1.5−x)Ta(x)O(6.5+y), with 0≦x<0.23 and 0≦y<0.9 and films with these average compositions with Bi2O3 particles in an amorphous matrix and a process of manufacture thereof. The crystalline BZNT-based dielectric material has a relative permittivity of at least 120, a maximum applied electric field of at least 4.0 MV/cm at 10 kHz, a maximum energy storage at 25° C. and 10 kHz of at least 50 J/cm3 and a maximum energy storage at 200° C. and 10 kHz of at least 22 J/cm3. The process is a wet chemical process that produces thin films of Bi1.5Zn(0.5+y)Nb(1.5−x)Ta(x)O(6.5+y) without the use of 2-methoxyethanol and pyridine.
SINGLE PHASE LEAD-FREE CUBIC PYROCHLORE BISMUTH ZINC NIOBATE-BASED DIELECTRIC MATERIALS AND PROCESSES FOR MANUFACTURE
MICHAEL ELIZABETH K (Autor:in) / TROLIER-MCKINSTRY SUSAN (Autor:in)
03.11.2016
Patent
Elektronische Ressource
Englisch
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