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METAL-FREE CVD COATING OF GRAPHENE ON GLASS AND OTHER DIELECTRIC SUBSTRATES
A catalyst-free CVD method for forming graphene. The method involves placing a substrate within a reaction chamber, heating the substrate to a temperature between 600° C. and 1100° C., and introducing a carbon precursor into the chamber to form a graphene layer on a surface of the substrate. The method does not use plasma or a metal catalyst to form the graphene.
METAL-FREE CVD COATING OF GRAPHENE ON GLASS AND OTHER DIELECTRIC SUBSTRATES
A catalyst-free CVD method for forming graphene. The method involves placing a substrate within a reaction chamber, heating the substrate to a temperature between 600° C. and 1100° C., and introducing a carbon precursor into the chamber to form a graphene layer on a surface of the substrate. The method does not use plasma or a metal catalyst to form the graphene.
METAL-FREE CVD COATING OF GRAPHENE ON GLASS AND OTHER DIELECTRIC SUBSTRATES
LIU XINYUAN (Autor:in) / MANLEY ROBERT GEORGE (Autor:in) / MORENA ROBERT MICHAEL (Autor:in) / SONG ZHEN (Autor:in)
09.02.2017
Patent
Elektronische Ressource
Englisch
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