Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
OXIDE SINTERED BODY AND SPUTTERING TARGET
Provided is a sputtering target with which it is possible to manufacture an amorphous or crystalline oxide semiconductor thin film with an annealing treatment at a lower temperature than previously, said oxide semiconductor thin film comprising indium and gallium and having a high carrier mobility. Also provided is an oxide sintered body comprising indium and gallium, said oxide sintered body being optimal for obtaining said sputtering target. An oxide sintered body comprising oxides of indium and gallium, wherein the oxide sintered body is characterized by having a gallium content according to the atomic ratio Ga/(In+Ga) of 0.10 to 0.49, having a CIE 1976 color space L* value of 50 to 68, and being composed of an In2O3 phase with a bixbyite-type structure and, as a formation phase other than the In2O3 phase, a GaInO3 phase with a β-Ga2O3-type structure, or a GaInO3 phase with a β-Ga2O3-type structure and a (Ga, In)2O3 phase.
OXIDE SINTERED BODY AND SPUTTERING TARGET
Provided is a sputtering target with which it is possible to manufacture an amorphous or crystalline oxide semiconductor thin film with an annealing treatment at a lower temperature than previously, said oxide semiconductor thin film comprising indium and gallium and having a high carrier mobility. Also provided is an oxide sintered body comprising indium and gallium, said oxide sintered body being optimal for obtaining said sputtering target. An oxide sintered body comprising oxides of indium and gallium, wherein the oxide sintered body is characterized by having a gallium content according to the atomic ratio Ga/(In+Ga) of 0.10 to 0.49, having a CIE 1976 color space L* value of 50 to 68, and being composed of an In2O3 phase with a bixbyite-type structure and, as a formation phase other than the In2O3 phase, a GaInO3 phase with a β-Ga2O3-type structure, or a GaInO3 phase with a β-Ga2O3-type structure and a (Ga, In)2O3 phase.
OXIDE SINTERED BODY AND SPUTTERING TARGET
NAKAYAMA TOKUYUKI (Autor:in) / NISHIMURA EIICHIRO (Autor:in) / MATSUMURA FUMIHIKO (Autor:in)
28.02.2019
Patent
Elektronische Ressource
Englisch
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