Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
SPUTTERING TARGET, METHOD FOR MANUFACTURING SPUTTERING TARGET, AND METHOD FOR FORMING THIN FILM
There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
SPUTTERING TARGET, METHOD FOR MANUFACTURING SPUTTERING TARGET, AND METHOD FOR FORMING THIN FILM
There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
SPUTTERING TARGET, METHOD FOR MANUFACTURING SPUTTERING TARGET, AND METHOD FOR FORMING THIN FILM
YAMAZAKI SHUNPEI (Autor:in) / MARUYAMA TETSUNORI (Autor:in) / IMOTO YUKI (Autor:in) / SATO HITOMI (Autor:in) / WATANABE MASAHIRO (Autor:in) / MASHIYAMA MITSUO (Autor:in) / OKAZAKI KENICHI (Autor:in) / NAKASHIMA MOTOKI (Autor:in) / SHIMAZU TAKASHI (Autor:in)
20.06.2019
Patent
Elektronische Ressource
Englisch
IPC:
C23C
Beschichten metallischer Werkstoffe
,
COATING METALLIC MATERIAL
/
B28B
Formgeben von Ton oder anderen keramischen Stoffzusammensetzungen, Schlacke oder von Mischungen, die zementartiges Material enthalten, z.B. Putzmörtel
,
SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG OR MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
/
C04B
Kalk
,
LIME
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
/
H10B
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