Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Metal Oxide Film and Semiconductor Device
A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.
Metal Oxide Film and Semiconductor Device
A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.
Metal Oxide Film and Semiconductor Device
HOSAKA YASUHARU (Autor:in) / OBONAI TOSHIMITSU (Autor:in) / SHIMA YUKINORI (Autor:in) / JINTYOU MASAMI (Autor:in) / KUROSAKI DAISUKE (Autor:in) / HAMOCHI TAKASHI (Autor:in) / KOEZUKA JUNICHI (Autor:in) / OKAZAKI KENICHI (Autor:in) / YAMAZAKI SHUNPEI (Autor:in)
21.05.2020
Patent
Elektronische Ressource
Englisch