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Silicon Nitride Sintered Body, Wear-Resistant Member, And Method For Manufacturing Silicon Nitride Sintered Body
According to an embodiment, a silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase, and in a case where Raman spectroscopy of a 20 μm×20 μm region in a central cross section of the silicon nitride sintered body is performed, two or more peaks are detected in ranges of 780 cm−1 to 810 cm−1 and 1340 cm−1 to 1370 cm−1, and four to six peaks are detected in ranges of 170 cm−1 to 190 cm−1, 607 cm−1 to 627 cm−1, 720 cm−1 to 740 cm−1, and 924 cm−1 to 944 cm−1.
Silicon Nitride Sintered Body, Wear-Resistant Member, And Method For Manufacturing Silicon Nitride Sintered Body
According to an embodiment, a silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase, and in a case where Raman spectroscopy of a 20 μm×20 μm region in a central cross section of the silicon nitride sintered body is performed, two or more peaks are detected in ranges of 780 cm−1 to 810 cm−1 and 1340 cm−1 to 1370 cm−1, and four to six peaks are detected in ranges of 170 cm−1 to 190 cm−1, 607 cm−1 to 627 cm−1, 720 cm−1 to 740 cm−1, and 924 cm−1 to 944 cm−1.
Silicon Nitride Sintered Body, Wear-Resistant Member, And Method For Manufacturing Silicon Nitride Sintered Body
OOKUBO KAZUYA (Autor:in)
30.11.2023
Patent
Elektronische Ressource
Englisch
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