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    COMPOSITE WAFER AND MANUFACTURING METHOD THEREFOR

    Neue Suche nach: AKIYAMA SHOJI

    Provided are a manufacturing method for a composite wafer and a composite wafer obtained by using the manufacturing method, the manufacturing method including: preparing a first substrate in which a first layer of any one of oxides, oxynitrides, and nitrides is disposed on one surface; preparing a second substrate in which a second layer of any one of oxides, oxynitrides, and nitrides is disposed on one surface; forming a silicon layer on a surface of one of the first layer or the second layer; activating, with plasma, a surface of at least one of the silicon layer or another of the first layer or the second layer; and bonding the first substrate and the second substrate.

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    COMPOSITE WAFER AND MANUFACTURING METHOD THEREFOR

    Neue Suche nach: AKIYAMA SHOJI

    Provided are a manufacturing method for a composite wafer and a composite wafer obtained by using the manufacturing method, the manufacturing method including: preparing a first substrate in which a first layer of any one of oxides, oxynitrides, and nitrides is disposed on one surface; preparing a second substrate in which a second layer of any one of oxides, oxynitrides, and nitrides is disposed on one surface; forming a silicon layer on a surface of one of the first layer or the second layer; activating, with plasma, a surface of at least one of the silicon layer or another of the first layer or the second layer; and bonding the first substrate and the second substrate.

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    COMPOSITE WAFER AND MANUFACTURING METHOD THEREFOR

    Neue Suche nach: AKIYAMA SHOJI

    Provided are a manufacturing method for a composite wafer and a composite wafer obtained by using the manufacturing method, the manufacturing method including: preparing a first substrate in which a first layer of any one of oxides, oxynitrides, and nitrides is disposed on one surface; preparing a second substrate in which a second layer of any one of oxides, oxynitrides, and nitrides is disposed on one surface; forming a silicon layer on a surface of one of the first layer or the second layer; activating, with plasma, a surface of at least one of the silicon layer or another of the first layer or the second layer; and bonding the first substrate and the second substrate.

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    Titel:

    COMPOSITE WAFER AND MANUFACTURING METHOD THEREFOR

    Beteiligte:

    AKIYAMA SHOJI (Autor:in)

    Erscheinungsdatum:

    07.12.2023

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Englisch

    Klassifikation:

    IPC:  B32B LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM , Schichtkörper, d.h. aus Ebenen oder gewölbten Schichten, z.B. mit zell- oder wabenförmiger Form, aufgebaute Erzeugnisse / C04B Kalk , LIME

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