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Silicon Nitride Sintered Body, Wear-Resistant Member, And Method For Producing Silicon Nitride Sintered Body
According to an embodiment, a silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase. In a case where Raman spectroscopy of a 20 μm×20 μm region at any cross section of the silicon nitride sintered body is performed, seven or more peaks are detected within a range of not less than 400 cm−1 and not more than 1200 cm−1, and the most intense peak of the seven or more peaks is not in a range of not less than 515 cm−1 and not more than 525 cm−1. Favorably, at least three of the seven or more peaks exist within a range of not less than 530 cm−1 and not more than 830 cm−1. It is favorable for at least one of the seven or more peaks to be within a range of not less than 440 cm−1 and not more than 460 cm−1.
Silicon Nitride Sintered Body, Wear-Resistant Member, And Method For Producing Silicon Nitride Sintered Body
According to an embodiment, a silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase. In a case where Raman spectroscopy of a 20 μm×20 μm region at any cross section of the silicon nitride sintered body is performed, seven or more peaks are detected within a range of not less than 400 cm−1 and not more than 1200 cm−1, and the most intense peak of the seven or more peaks is not in a range of not less than 515 cm−1 and not more than 525 cm−1. Favorably, at least three of the seven or more peaks exist within a range of not less than 530 cm−1 and not more than 830 cm−1. It is favorable for at least one of the seven or more peaks to be within a range of not less than 440 cm−1 and not more than 460 cm−1.
Silicon Nitride Sintered Body, Wear-Resistant Member, And Method For Producing Silicon Nitride Sintered Body
SANO SHOYA (Autor:in) / AOKI KATSUYUKI (Autor:in) / FUNAKI KAI (Autor:in) / OOKUBO KAZUYA (Autor:in)
07.12.2023
Patent
Elektronische Ressource
Englisch
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