Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
HIGHLY THERMALLY CONDUCTIVE SILICON NITRIDE SINTERED BODY, SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE
According to an embodiment, a highly thermally conductive silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase. A thermal conductivity of the silicon nitride sintered body is not less than 80 W/(m·K). An average value of solid solution oxygen amounts of the silicon nitride crystal grains existing in a 20 μm×20 μm unit area in any cross section is not more than 0.2 wt %. An average value of major diameters of the silicon nitride crystal grains existing in a 50 μm×50 μm unit area in any cross section is not less than 1 μm and not more than 10 μm. An average of aspect ratios of the silicon nitride crystal grains existing in the 50 μm×50 μm unit area is not less than 2 and not more than 10.
HIGHLY THERMALLY CONDUCTIVE SILICON NITRIDE SINTERED BODY, SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE
According to an embodiment, a highly thermally conductive silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase. A thermal conductivity of the silicon nitride sintered body is not less than 80 W/(m·K). An average value of solid solution oxygen amounts of the silicon nitride crystal grains existing in a 20 μm×20 μm unit area in any cross section is not more than 0.2 wt %. An average value of major diameters of the silicon nitride crystal grains existing in a 50 μm×50 μm unit area in any cross section is not less than 1 μm and not more than 10 μm. An average of aspect ratios of the silicon nitride crystal grains existing in the 50 μm×50 μm unit area is not less than 2 and not more than 10.
HIGHLY THERMALLY CONDUCTIVE SILICON NITRIDE SINTERED BODY, SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE
AOKI KATSUYUKI (Autor:in) / GOTO YASUHIRO (Autor:in) / IWAI KENTARO (Autor:in) / FUKASAWA TAKAYUKI (Autor:in) / YAMAGATA YOSHIHITO (Autor:in)
06.06.2024
Patent
Elektronische Ressource
Englisch
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