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A semiconductor ceramic including a microstructure including 5 to 40% by volume of a particulate conducting phase, and 60 to 95% by volume of a particulate insulating phase, a size of the particles of the conducting phase being between 5 nm and 11 μm, 65 to 80% of the particles of the conducting phase having an average diameter smaller than 1 μm, and 20 to 35% of the conducting particles having an average diameter between 1 and 11 μm, and a distance between two adjacent particles of the conducting phase being between 30 Angström and 5 μm.
A semiconductor ceramic including a microstructure including 5 to 40% by volume of a particulate conducting phase, and 60 to 95% by volume of a particulate insulating phase, a size of the particles of the conducting phase being between 5 nm and 11 μm, 65 to 80% of the particles of the conducting phase having an average diameter smaller than 1 μm, and 20 to 35% of the conducting particles having an average diameter between 1 and 11 μm, and a distance between two adjacent particles of the conducting phase being between 30 Angström and 5 μm.
Semiconductor ceramic
DRAZENOVIC BÉATRICE (Autor:in)
25.08.2015
Patent
Elektronische Ressource
Englisch
Semiconductor ceramic and semiconductor ceramic element
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