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Laminated structure, member for semiconductor manufacturing apparatus, and method for producing laminated structure
A laminated structure 10 includes a first structure 12 containing a main phase of magnesium-aluminum oxynitride, a second structure 14 containing a main phase of aluminum nitride and grain boundary phases of a rare-earth aluminum composite oxide having a garnet-type crystal structure, and a reaction layer 15 formed between the first structure 12 and the second structure 14. The reaction layer 15 is an aluminum nitride layer containing a smaller amount of grain boundary phases 18 of the rare-earth aluminum composite oxide than the second structure 14. The reaction layer 15 of the laminated structure 10 has a thickness of 150 μm or less. The reaction layer 15 is formed during the sintering by diffusing the grain boundary phases 18 into the first structure 12.
Laminated structure, member for semiconductor manufacturing apparatus, and method for producing laminated structure
A laminated structure 10 includes a first structure 12 containing a main phase of magnesium-aluminum oxynitride, a second structure 14 containing a main phase of aluminum nitride and grain boundary phases of a rare-earth aluminum composite oxide having a garnet-type crystal structure, and a reaction layer 15 formed between the first structure 12 and the second structure 14. The reaction layer 15 is an aluminum nitride layer containing a smaller amount of grain boundary phases 18 of the rare-earth aluminum composite oxide than the second structure 14. The reaction layer 15 of the laminated structure 10 has a thickness of 150 μm or less. The reaction layer 15 is formed during the sintering by diffusing the grain boundary phases 18 into the first structure 12.
Laminated structure, member for semiconductor manufacturing apparatus, and method for producing laminated structure
JINDO ASUMI (Autor:in) / INOUE KATSUHIRO (Autor:in) / KATSUDA YUJI (Autor:in)
22.09.2015
Patent
Elektronische Ressource
Englisch
IPC:
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
/
B32B
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
,
Schichtkörper, d.h. aus Ebenen oder gewölbten Schichten, z.B. mit zell- oder wabenförmiger Form, aufgebaute Erzeugnisse
/
C04B
Kalk
,
LIME
/
H01J
Elektrische Entladungsröhren oder Entladungslampen
,
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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