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A process for sintering silicon carbide is provided which includes the steps of providing a silicon carbide powder of silicon carbide granules; purifying the silicon carbide powder; subjecting the purified silicon carbide powder to a gel-casting process; removing the gel-cast part from the mold; drying the gel-cast part; obtaining a dried cast ceramic part (a green body) which is capable of green machining into a final desired shape; firing the green body in an oven at temperatures ranging from about 100° C. to about 1900° C. to remove or burn out any polymer remaining in the ceramic; and sintering the green body at temperatures ranging from about 1600° C. to less than about 2200° C.
A process for sintering silicon carbide is provided which includes the steps of providing a silicon carbide powder of silicon carbide granules; purifying the silicon carbide powder; subjecting the purified silicon carbide powder to a gel-casting process; removing the gel-cast part from the mold; drying the gel-cast part; obtaining a dried cast ceramic part (a green body) which is capable of green machining into a final desired shape; firing the green body in an oven at temperatures ranging from about 100° C. to about 1900° C. to remove or burn out any polymer remaining in the ceramic; and sintering the green body at temperatures ranging from about 1600° C. to less than about 2200° C.
Process for sintering silicon carbide
ADAMS DALE (Autor:in)
31.05.2016
Patent
Elektronische Ressource
Englisch
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