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Self-bonding of chemically vapor deposited SiC articles
Method and system for bonding two or more CVD SiC articles together without the use of interface materials using applied forces from about 0.0035 MPa to about 0.035 MPa. The articles are pretreated for bonding. Graphite or other fixtures are used to apply forces in a vacuum or inert gas environment. Temperatures from about 1900° C. to about 2200° C. are used to initiate a β→α transition in the SiC to create bonded CVS SiC articles.
Self-bonding of chemically vapor deposited SiC articles
Method and system for bonding two or more CVD SiC articles together without the use of interface materials using applied forces from about 0.0035 MPa to about 0.035 MPa. The articles are pretreated for bonding. Graphite or other fixtures are used to apply forces in a vacuum or inert gas environment. Temperatures from about 1900° C. to about 2200° C. are used to initiate a β→α transition in the SiC to create bonded CVS SiC articles.
Self-bonding of chemically vapor deposited SiC articles
CHAND ALINA (Autor:in) / CHAND RONALD H (Autor:in) / DIPIETRO STEPHEN G (Autor:in) / PUJARI VIMAL K (Autor:in)
30.08.2016
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
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