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Tungsten nitrido precursors for the CVD of tungsten nitride, carbonitride, and oxide films
Embodiments of the invention are directed to a method of preparing a WNx, WNxCy, WNxOz, and WNxCyOz solid by the deposition of a WNx precursor at a temperature below 300° C. The WNx precursor is a tungsten nitrido complex. The deposition can be carried out using a tungsten nitrido complex as a single-source metal organic precursor. In an embodiment of the invention, the deposition can be performed to form a plurality of WNx, WNxCy, WNxOz, WNxCyOz nanoparticles.
Tungsten nitrido precursors for the CVD of tungsten nitride, carbonitride, and oxide films
Embodiments of the invention are directed to a method of preparing a WNx, WNxCy, WNxOz, and WNxCyOz solid by the deposition of a WNx precursor at a temperature below 300° C. The WNx precursor is a tungsten nitrido complex. The deposition can be carried out using a tungsten nitrido complex as a single-source metal organic precursor. In an embodiment of the invention, the deposition can be performed to form a plurality of WNx, WNxCy, WNxOz, WNxCyOz nanoparticles.
Tungsten nitrido precursors for the CVD of tungsten nitride, carbonitride, and oxide films
MCELWEE-WHITE LISA (Autor:in) / ANDERSON TIMOTHY JAMES (Autor:in) / MCCLAIN K RANDALL (Autor:in) / O'DONOHUE CHRISTOPHER (Autor:in)
10.01.2017
Patent
Elektronische Ressource
Englisch
IPC:
C07F
Acyclische, carbocyclische oder heterocyclische Verbindungen, die andere Elemente als Kohlenstoff, Wasserstoff, Halogen, Sauerstoff, Stickstoff, Schwefel, Selen oder Tellur enthalten
,
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
/
C04B
Kalk
,
LIME
/
C23C
Beschichten metallischer Werkstoffe
,
COATING METALLIC MATERIAL
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