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    Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method

    Neue Suche nach: GUEGAN GUILLAUME
    Neue Suche nach: WATANABE TOSHIAKI
    Neue Suche nach: SOYAMA NOBUYUKI
    Neue Suche nach: SAKURAI HIDEAKI

    A dielectric-thin-film forming composition for forming a BST dielectric thin film, includes a liquid composition for forming a thin film which takes a form of a mixed composite metal oxide in which a composite oxide B including Cu (copper) is mixed into a composite metal oxide A expressed by a formula: Ba1-xSrxTiyO3 (wherein 0.2<0.15.

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    Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method

    Neue Suche nach: GUEGAN GUILLAUME
    Neue Suche nach: WATANABE TOSHIAKI
    Neue Suche nach: SOYAMA NOBUYUKI
    Neue Suche nach: SAKURAI HIDEAKI

    A dielectric-thin-film forming composition for forming a BST dielectric thin film, includes a liquid composition for forming a thin film which takes a form of a mixed composite metal oxide in which a composite oxide B including Cu (copper) is mixed into a composite metal oxide A expressed by a formula: Ba1-xSrxTiyO3 (wherein 0.2<0.15.

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    Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method

    Neue Suche nach: GUEGAN GUILLAUME
    Neue Suche nach: WATANABE TOSHIAKI
    Neue Suche nach: SOYAMA NOBUYUKI
    Neue Suche nach: SAKURAI HIDEAKI

    A dielectric-thin-film forming composition for forming a BST dielectric thin film, includes a liquid composition for forming a thin film which takes a form of a mixed composite metal oxide in which a composite oxide B including Cu (copper) is mixed into a composite metal oxide A expressed by a formula: Ba1-xSrxTiyO3 (wherein 0.2<0.15.

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    Titel:

    Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method

    Beteiligte:

    GUEGAN GUILLAUME (Autor:in) / WATANABE TOSHIAKI (Autor:in) / SOYAMA NOBUYUKI (Autor:in) / SAKURAI HIDEAKI (Autor:in)

    Erscheinungsdatum:

    14.03.2017

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Englisch

    Klassifikation:

    IPC:  H01G Kondensatoren , CAPACITORS / C04B Kalk , LIME / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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