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Method of making high purity polycrystalline aluminum oxynitride bodies useful in semiconductor process chambers
A method of making high purity crystalline AlON bodies by synthesizing and calcining AlON powders having less than 80 ppm Si, Mg, Ca, Na, and K impurities. The AlON powders are milled to reduce the particle size of the AlON powders using a high purity milling media. An AlON body is formed from the milled AlON powders. Such AlON bodies are particularly suitable for semiconductor process chamber components.
Method of making high purity polycrystalline aluminum oxynitride bodies useful in semiconductor process chambers
A method of making high purity crystalline AlON bodies by synthesizing and calcining AlON powders having less than 80 ppm Si, Mg, Ca, Na, and K impurities. The AlON powders are milled to reduce the particle size of the AlON powders using a high purity milling media. An AlON body is formed from the milled AlON powders. Such AlON bodies are particularly suitable for semiconductor process chamber components.
Method of making high purity polycrystalline aluminum oxynitride bodies useful in semiconductor process chambers
SASTRI SURI A (Autor:in) / BALASUBRAMANIAN SREERAM (Autor:in) / GOLDMAN LEE M (Autor:in)
02.05.2017
Patent
Elektronische Ressource
Englisch
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