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Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target
Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550° C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 3.0×1018 cm−3 or lower, and a carrier mobility of 10 cm2V−1 sec−1 or higher.
Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target
Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550° C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 3.0×1018 cm−3 or lower, and a carrier mobility of 10 cm2V−1 sec−1 or higher.
Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target
NAKAYAMA TOKUYUKI (Autor:in) / NISHIMURA EIICHIRO (Autor:in) / MATSUMURA FUMIHIKO (Autor:in) / IWARA MASASHI (Autor:in)
27.06.2017
Patent
Elektronische Ressource
Englisch
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