Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the manufacture of semiconductor devices: Fid-Bau Portal

Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the manufacture of semiconductor devices

CARROLL ALAN FREDERICK / HANG KENNETH WARREN / LAUGHLIN BRIAN J / MIKESKA KURT RICHARD / TORARDI CARMINE / VERNOOY PAUL DOUGLAS

Abstract

The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick film paste comprises an electrically conductive metal, and a lead-tellurium-lithium-oxide dispersed in an organic medium.

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Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the manufacture of semiconductor devices

CARROLL ALAN FREDERICK / HANG KENNETH WARREN / LAUGHLIN BRIAN J / MIKESKA KURT RICHARD / TORARDI CARMINE / VERNOOY PAUL DOUGLAS

Abstract

Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the manufacture of semiconductor devices

CARROLL ALAN FREDERICK / HANG KENNETH WARREN / LAUGHLIN BRIAN J / MIKESKA KURT RICHARD / TORARDI CARMINE / VERNOOY PAUL DOUGLAS

Abstract

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Titel:

Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the manufacture of semiconductor devices

Beteiligte:

CARROLL ALAN FREDERICK (Autor:in) / HANG KENNETH WARREN (Autor:in) / LAUGHLIN BRIAN J (Autor:in) / MIKESKA KURT RICHARD (Autor:in) / TORARDI CARMINE (Autor:in) / VERNOOY PAUL DOUGLAS (Autor:in)

Erscheinungsdatum:

01.08.2017

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Englisch

Klassifikation:

IPC: H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / B22F Verarbeiten von Metallpulver , WORKING METALLIC POWDER / C03C Chemische Zusammensetzungen für Gläser, Glasuren oder Emails , CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS / C04B Kalk , LIME / H01B CABLES , Kabel

CARROLL ALAN FREDERICK / HANG KENNETH WARREN / LAUGHLIN BRIAN J et al. | Europäisches Patentamt | 2019

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THICK-FILM PASTES CONTAINING LEAD-TELLURIUM-LITHIUM- OXIDES, AND THEIR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES

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