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Preparation and charaterization of high (100) oriented PSTT5 thin flims by RF sputtering technology
0.95Pb(Sc0.5Ta0.5)O3-0.05PbTiO3(PSTT5) thin films were prepared on LaNiO3(LNO)/SiO2/Si substrate by RF sputtering technology. After sputtering, the PSTT5 thin films were annealed by normal one-step rapid thermal annealing (OSRTA) or a renovation of two-step rapid thermal annealing (TSRTA). The PSTT5 films annealed by TSA show high (100) orientation, high phase purity, sufficient crystallization and enhanced ferroelectric properties. The TSRTA mechanism was also discussed.
Preparation and charaterization of high (100) oriented PSTT5 thin flims by RF sputtering technology
0.95Pb(Sc0.5Ta0.5)O3-0.05PbTiO3(PSTT5) thin films were prepared on LaNiO3(LNO)/SiO2/Si substrate by RF sputtering technology. After sputtering, the PSTT5 thin films were annealed by normal one-step rapid thermal annealing (OSRTA) or a renovation of two-step rapid thermal annealing (TSRTA). The PSTT5 films annealed by TSA show high (100) orientation, high phase purity, sufficient crystallization and enhanced ferroelectric properties. The TSRTA mechanism was also discussed.
Preparation and charaterization of high (100) oriented PSTT5 thin flims by RF sputtering technology
Xuedong Li, (Autor:in) / Chen, Qiang (Autor:in) / Yucheng Sun, (Autor:in) / Yuanyuan Zhou, (Autor:in) / Jiliang Zhu, (Autor:in) / Dingquan Xiao, (Autor:in) / Jianguo Zhu, (Autor:in)
01.08.2009
110760 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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