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1.55 μm InAs quantum dot DFB lasers

Jin Soo Kim, / Ho-Sang Kwack, / Byung Seok Choi, / Eundeuk Sim, / Chul Wook Lee, / Dae Kon Oh, / Cheul-Ro Lee,

For the fabrication of quantum dot (QD) distributed feedback (DFB) lasers, self-assembled InAs QDs were grown on the InP/InGaAs grating structures by a molecular beam epitaxy. Ridge-waveguide QD DFB lasers with a stripe width of 3 μm were fabricated. Single-mode lasing operation around the wavelength of 1.56 μm was successfully achieved under the pulsed and continuous-wave (CW) modes at room temperature. The lasing operation was also observed up to 70 °C, which is the first observation on the single-mode lasing around 1.55 μm. The characteristic temperatures calculated from the temperature dependence of the threshold current density were 121.8 K from room temperature to 45 °C and 74.2 K up to 70 °C, respectively.

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1.55 μm InAs quantum dot DFB lasers

Jin Soo Kim, / Ho-Sang Kwack, / Byung Seok Choi, / Eundeuk Sim, / Chul Wook Lee, / Dae Kon Oh, / Cheul-Ro Lee,

For the fabrication of quantum dot (QD) distributed feedback (DFB) lasers, self-assembled InAs QDs were grown on the InP/InGaAs grating structures by a molecular beam epitaxy. Ridge-waveguide QD DFB lasers with a stripe width of 3 μm were fabricated. Single-mode lasing operation around the wavelength of 1.56 μm was successfully achieved under the pulsed and continuous-wave (CW) modes at room temperature. The lasing operation was also observed up to 70 °C, which is the first observation on the single-mode lasing around 1.55 μm. The characteristic temperatures calculated from the temperature dependence of the threshold current density were 121.8 K from room temperature to 45 °C and 74.2 K up to 70 °C, respectively.

1.55 μm InAs quantum dot DFB lasers

Jin Soo Kim, / Ho-Sang Kwack, / Byung Seok Choi, / Eundeuk Sim, / Chul Wook Lee, / Dae Kon Oh, / Cheul-Ro Lee,

For the fabrication of quantum dot (QD) distributed feedback (DFB) lasers, self-assembled InAs QDs were grown on the InP/InGaAs grating structures by a molecular beam epitaxy. Ridge-waveguide QD DFB lasers with a stripe width of 3 μm were fabricated. Single-mode lasing operation around the wavelength of 1.56 μm was successfully achieved under the pulsed and continuous-wave (CW) modes at room temperature. The lasing operation was also observed up to 70 °C, which is the first observation on the single-mode lasing around 1.55 μm. The characteristic temperatures calculated from the temperature dependence of the threshold current density were 121.8 K from room temperature to 45 °C and 74.2 K up to 70 °C, respectively.

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Titel:

1.55 μm InAs quantum dot DFB lasers

Beteiligte:

Jin Soo Kim, (Autor:in) / Ho-Sang Kwack, (Autor:in) / Byung Seok Choi, (Autor:in) / Eundeuk Sim, (Autor:in) / Chul Wook Lee, (Autor:in) / Dae Kon Oh, (Autor:in) / Cheul-Ro Lee, (Autor:in)

Erschienen in:

2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 332-333

Erscheinungsdatum:

01.10.2006

Format / Umfang:

473155 byte

ISBN:

978-1-4244-0541-1 , 978-1-4244-0540-4

DOI:

https://doi.org/10.1109/NMDC.2006.4388753

Medientyp:

Aufsatz (Konferenz)

Format:

Elektronische Ressource

Sprache:

Englisch

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