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AC analysis of MISIS capacitor

Sarkar, Angik / Bhattacharyya, T.K.

AC performance of MISIS(Metal Insulator Semiconductor Insulator Semiconductor) Capacitor has been analyzed in this paper. The performance of MISIS and MOS have been found to be similar but for the gate leakage current which is greatly suppressed in MISIS. Absence of threshold voltage shift in MISIS makes it a promising candidate for low power technology.

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AC analysis of MISIS capacitor

Sarkar, Angik / Bhattacharyya, T.K.

AC performance of MISIS(Metal Insulator Semiconductor Insulator Semiconductor) Capacitor has been analyzed in this paper. The performance of MISIS and MOS have been found to be similar but for the gate leakage current which is greatly suppressed in MISIS. Absence of threshold voltage shift in MISIS makes it a promising candidate for low power technology.

AC analysis of MISIS capacitor

Sarkar, Angik / Bhattacharyya, T.K.

AC performance of MISIS(Metal Insulator Semiconductor Insulator Semiconductor) Capacitor has been analyzed in this paper. The performance of MISIS and MOS have been found to be similar but for the gate leakage current which is greatly suppressed in MISIS. Absence of threshold voltage shift in MISIS makes it a promising candidate for low power technology.

Zugriff

Zugriff prüfen

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Bestellung bei Subito €

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Ähnliche Titel

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Titel:

AC analysis of MISIS capacitor

Beteiligte:

Sarkar, Angik (Autor:in) / Bhattacharyya, T.K. (Autor:in)

Erschienen in:

2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 558-559

Erscheinungsdatum:

01.10.2006

Format / Umfang:

428991 byte

ISBN:

978-1-4244-0541-1 , 978-1-4244-0540-4

DOI:

https://doi.org/10.1109/NMDC.2006.4388901

Medientyp:

Aufsatz (Konferenz)

Format:

Elektronische Ressource

Sprache:

Englisch

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