Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Effect of charge storage in silicon nanocrystals on needle-like nano-structure for non-volatile memory
In this work, Metal-Insulator-Semiconductor (MIS) devices with silicon nitride film as insulator layer have been fabricated on needle-like nano-structures, which can be applicable to non-volatile memory device with increased charge storage capacity over planar structures. We have already reported surface morphologies of needle-like structures and existence of nanocrystals in silicon nitride layer using photoluminescence (PL). In this paper, memory effects are demonstrated by electronic properties of MIS devices with substrate of nano structure. Window sizes of capacitance-voltage (C-V) characteristics in MIS devices on substrates of nanostructure are formed to increase compared to that in MIS device fabricated on planar structure. Therefore, a non-volatile memory device with increased charge storage capacity over planar structure can be realized with the nano-structure.
Effect of charge storage in silicon nanocrystals on needle-like nano-structure for non-volatile memory
In this work, Metal-Insulator-Semiconductor (MIS) devices with silicon nitride film as insulator layer have been fabricated on needle-like nano-structures, which can be applicable to non-volatile memory device with increased charge storage capacity over planar structures. We have already reported surface morphologies of needle-like structures and existence of nanocrystals in silicon nitride layer using photoluminescence (PL). In this paper, memory effects are demonstrated by electronic properties of MIS devices with substrate of nano structure. Window sizes of capacitance-voltage (C-V) characteristics in MIS devices on substrates of nanostructure are formed to increase compared to that in MIS device fabricated on planar structure. Therefore, a non-volatile memory device with increased charge storage capacity over planar structure can be realized with the nano-structure.
Effect of charge storage in silicon nanocrystals on needle-like nano-structure for non-volatile memory
Sungwook Jung, (Autor:in) / Sunghyun Hwang, (Autor:in) / Jeoungin Lee, (Autor:in) / Dae-Ho Park, (Autor:in) / Byeong-Hyeok Sohn, (Autor:in) / S.K.Dhunge, (Autor:in) / Kyunghae Kim, (Autor:in) / J. Yi, (Autor:in)
01.10.2006
659716 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Fabrication of needle-like nanostructures using block copolymer for non-volatile memory
| British Library Online Contents | 2007
| British Library Online Contents | 2015
| British Library Online Contents | 2013
Development of Biomimetic Needle-like Apatite Nanocrystals by a Simple New Method
| British Library Online Contents | 2004
Particle Size and Morphology of Iridium Oxide Nanocrystals in Non-Volatile Memory Device
| British Library Online Contents | 2011